IRF3711SPBF Allicdata Electronics
Allicdata Part #:

IRF3711SPBF-ND

Manufacturer Part#:

IRF3711SPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 20V 110A D2PAK
More Detail: N-Channel 20V 110A (Tc) 3.1W (Ta), 120W (Tc) Surfa...
DataSheet: IRF3711SPBF datasheetIRF3711SPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 120W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 6 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRF3711SPBF is an advanced metal-oxide-semiconductor field-effect transistor (MOSFET) designed for applications such as DC-DC converters, uninterruptible power supplies (UPSs), and switch-mode power supplies (SMPSs). As a single MOSFET device, it has a combination of low on-resistance, fast switching speed, and very low gate charge making it a popular choice of power electronics engineers.

By working on the principle of source-drain current passing through a channel in the substrate, the IRF3711SPBF MOSFET is able to act as a switch. This ability to function as a switch enables it to be used in DC-DC converters, motor controllers, and other power electronics applications where fast switching speed is required. Additionally, due to its low gate charge, the MOSFET is also suitable for use in low power applications.

It should be noted that, due to its drive requirements, the IRF3711SPBF may not be suitable for applications where the gate voltage needs to be controlled precisely. Additionally, due to its high capacitance and low on-resistance, it is not recommended for digital logic applications.

However, the IRF3711SPBF is ideally suited for high performance tasks such as DC-DC converters and uninterruptible power supplies (UPSs). In these applications, the speed of switching and the low on-resistance of the MOSFET device allows it to effectively manage the load current without the need for significant external components. In addition, due to its low gate charge, it is also able to reduce the total power consumption of the circuit.

Overall, the IRF3711SPBF MOSFET is a popular choice of power electronics engineers due to its high performance and low power consumption. It is well-suited for use in applications where high speed switching and low on-resistance are required. Additionally, its low gate charge makes it a good choice for applications where low power consumption is a priority.

The specific data is subject to PDF, and the above content is for reference

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