Allicdata Part #: | IRF3711Z-ND |
Manufacturer Part#: |
IRF3711Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 92A TO-220AB |
More Detail: | N-Channel 20V 92A (Tc) 79W (Tc) Through Hole TO-22... |
DataSheet: | IRF3711Z Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.45V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 79W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2150pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 24nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 6 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 92A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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.The IRF3711Z is a high-performance, low-cost single-channel N-channel power MOSFET optimized for applications that require high-channel density and low cost. This device also has low gate charging and ultra-low reverse leakage currents available in a small footprint. The IRF3711Z is designed to be used as an easy way to switch large currents in applications such as automotive, power systems, and inverters.
IIRF3711Z Application Field
The IRF3711Z is most commonly used in automotive applications, to provide EMI and EMC protection. This device is an ideal choice for providing the power switching needs of automotive computers, allowing the ECU to control the engine and other devices. The device can also be used in various power systems and inverters, where it provides high current switching capability at a low cost.
Working Principle of IRF3711Z
The IRF3711Z is a single-chip, single-channel N- type MOSFET. The device operates on 3Vand has an impressive breakdown voltage of 600V. The device is designed to operate as an easy way to switch large currents in both directions. It allows low-power microcontrollers to control the on/off state of the device. It can be used to switch a wide range of currents, from tens of microns to thousands of amps.
The device utilizes an electrostatic field to control the on/off state of the switch. To turn on the device, the gate must be positive with respect to the source terminal of the device. This causes electrons to flow into the gate region, creating a charge that attracts carriers to the channel and allows them to move through the device. To turn off the device, the gate must be negative with respect to the source terminal. This causes the electrostatic field to repel the carriers away from the channel and prevents current from flowing through the device.
The device is designed to operate at low gate drive voltages and has a very low input capacitance. This allows the device to be used with low-power microcontrollers and provides a fast response time when switching. The device also has an on-resistance of 23mΩ and has a breakdown voltage of 600V.
The IRF3711Z is a single-channel N-type power MOSFET that is widely used in automotive and power applications. It provides high current switching capabilities in a small footprint and offers low-cost and low power consumption. It has an impressive breakdown voltage, low gate drive voltage, and a very low input capacitance, making it an excellent choice for applications that require high current switching at a low cost.
The specific data is subject to PDF, and the above content is for reference
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