IRF3707LPBF Allicdata Electronics
Allicdata Part #:

IRF3707LPBF-ND

Manufacturer Part#:

IRF3707LPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 62A TO-262
More Detail: N-Channel 30V 62A (Tc) 87W (Tc) Through Hole TO-26...
DataSheet: IRF3707LPBF datasheetIRF3707LPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 87W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRF3707LPBF MOSFET is a member of the family of advanced single-channel logic-level power MOSFETs from International Rectifier. These transistors are available in a DPAK package, and have been designed with low overall capacitance for fast switching and improved level-shifting performance. The IRF3707LPBF provides excellent high-speed switching performance and improved high-temperature stability. They are designed to operate over the entire input voltage and temperature range.

The IRF3707LPBF is a logic-level power MOSFET with a very low output-source capacitance values, allowing fast switching capability. The device features an optimized gate drive threshold voltage and ultra-low gate resistance, providing better current performance and enhanced thermal operation over similar products. Additionally, the Gate-Source voltage (Vgs) range is optimized to reduce unnecessary power consumption, while the body-drain diode (Rdson) is optimized for low-current applications.

The IRF3707LPBF is suitable for use in a wide range of applications, such as switching converters, level shifters, high-speed logic and switch mode power supplies, motor controllers, power management, and other high-frequency, low-voltage circuits.

The IRF3707LPBF works by controlling the flow of a current through its Source to Drain (S-D) path in response to the applied Gate voltage. When the Gate voltage is low (Vgs<Vthreshold), the S-D path is blocked and no current flows through the device. When the Gate voltage is high (Vgs>Vthreshold), the S-D path is opened and current is allowed to flow from the Source to Drain. The higher the Gate voltage, the more current can flow through the device.

In addition to the low capacitance, the IRF3707LPBF has anti-parasitic behavior that prevents parasitic oscillations or instabilities due to the inductive nature of the switching path. This allows for improved noise immunity, which can be utilized in high-frequency applications such as switching converters, RF and telecom systems, as well as in automotive and industrial electronics.

The IRF3707LPBF is also designed to be integrated into an adjustable variable frequency drive (VFD) circuit, allowing the switching speed to be adjustable without the need for external components. This improves reliability and overall efficiency of the system. The IRF3707LPBF is capable of handling high in-rush currents, making it suitable for use in motor controllers and other applications requiring high current and voltage.

Overall, the IRF3707LPBF is an ideal device for improving the efficiency and performance of a range of switching applications. It offers low output-source capacitance, improved switching speed, and anti-parasitic behavior for improved noise immunity. In addition, the device can be integrated into an adjustable VFD circuit, allowing for improved system reliability and efficiency.

The specific data is subject to PDF, and the above content is for reference

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