
Allicdata Part #: | IRF3709ZS-ND |
Manufacturer Part#: |
IRF3709ZS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 87A D2PAK |
More Detail: | N-Channel 30V 87A (Tc) 79W (Tc) Surface Mount D2PA... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.25V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 79W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2130pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 26nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 6.3 mOhm @ 21A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 87A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRF3709ZS is a transistor in the form of Field Effect Transistor (FET). It is a type of single MOSFET, which stands for Metal Oxide Semiconductor Field Effect Transistor. This type of FET has a gate or control electrode along with a substrate, source and drain electrodes formed between them. The substrate is usually used for bonding, and it’s made of semi-insulating silicon-on-insulator (SOI).
IRF3709ZS is a non-polar transistor, which makes it suitable for applications where a high switching speed is desired. It can be used as both a high power switch and a low power driver, with the latter being more common. In terms of its properties, it has a low-gate-threshold voltage and fast switching times when compared to other FETs. It also has a wide drain-to-source breakdown voltage, making it useful in high-voltage applications. Some of the key features of the IRF3709ZS include a breakdown voltage of 68V, a current rating of 42A and a high-temperature operating temperature range of -55°C to 175°C.
The working principle of this transistor is based on the principle of gate-source voltage modulation. The gate voltage is applied to the gate terminal, which in turn modulates the channel between the source and drain electrodes. The current through the channel is proportional to the gate voltage, making the IRF3709ZS a voltage-controlled device. As the voltage applied to the gate increases, the FET will reduce the resistance in the channel and allow more current to flow, thus acting as a switch. As long as the gate voltage is kept above the threshold voltage, it will remain turned on and allow current to flow. If it is below the threshold voltage, it will remain in the off state.
The IRF3709ZS is mainly used in automotive, industrial and consumer applications. In the automotive industry, the FET is mainly used in the voltage regulation circuits and battery-charging systems. In consumer electronics, it is used for power management such as power supply design and portable electronic devices. In industrial applications, it can be used for motor control, automotive control and power control. It is also an essential component in applications such as PWM DC-DC converters, low-frequency power converters and inverters.
Overall, the IRF3709ZS is a versatile single FET transistor with good performance and high reliability. It is suitable for use in many different high power switching and driving applications. Its non-polar nature makes it suitable for applications where a fast switching speed is desired. With its high breakdown voltage, it can also be used in high-voltage applications.
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