IRF3708SPBF

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Integrated with a static drain-to-source on-state resistance (Rds(on)), the IRF3708SPBF is a single N-channel enhancement-mode vertical drain field-effect transistor (FET). It is designed to be used in an immersion cooling environment, and its working temperature range is 5°C to 25°C. The IRF3708SPBF offers fast switching speeds and low drain-source on-state resistance, making it ideal for low on-resistance power control applications such as core voltage regulation, dc-dc converters, buck and boost converters, general purpose inverter switches, and Class D amplifiers.

The IRF3708SPBF is a vertical mode FET with an internal shielded gate electrode, which reduces gate capacitance and gate-to-source capacitance. It operates at higher gate voltages than standard MOSFETs, which helps increase the maximum working voltage of the device, while still providing a low on-state resistance. The IRF3708SPBF is constructed with a single vertical N-channel MOSFET, and has a drain-source breakdown voltage of 30 V, a typical Rds(on) of 0.98 mΩ, and a maximum continuous drain current (Id) of 7 A.

The IRF3708SPBF\'s application field consists of high-Rds(on), switch mode power supplies, dc-dc converters, voltage regulators, and Class D amplifiers. Owing to its vertical mode design and low Rds(on), it is also ideal for low power loss and high efficiency applications such as core voltage regulation, buck and boost converters, and general-purpose switching. The IRF3708SPBF is also suitable for immersion cooling, allowing for even greater output power efficiency in various power-driven electronic applications.

The working principle of the IRF3708SPBF is that when the drain voltage (Vd) is higher than the source voltage (Vs), the MOSFET is turned on and the drain current (Id) is amplified by the drain-source resistance (Rds); when the Vd is lower than the Vs, the MOSFET is turned off and the Id is reduced to a standby current. The switching speed of the FET depends on the characteristic of the device and the external circuit components. The drain-source resistance is the main factor for power loss. Consequently, the FET with a low value of Rds(on) will exhibit high efficiency.

The IRF3708SPBF is a good choice for power control applications, offering good switching speed, low on-state resistance, high voltage handling capability, and low power loss. Its suitability for immersion cooling allows it to operate in harsh and high performance environments, thus making it an ideal solution for applications in the automotive, industrial, and consumer sectors.

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