IRF3315STRL

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.8W (Ta), 94W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1300pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	95nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	82 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	21A (Tc)
Drain to Source Voltage (Vdss):	150V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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IRF3315STRL application field and working principleIRF3315STRL is an N-channel enhancement-mode power Field-Effect Transistor (FET) optimized for power switching applications. It is suitable for various applications such as high-current switching and high density DC/DC converters.Features and benefits IRF3315STRL provides advantages for power switching applications. It has low On-State resistance, fast switching speed, low gate charge, and low capacitance switching characteristics. It is also RoHS-compliant and halogen-free, which makes the device safe and environmentally friendly. External view and pin assignmentIRF3315STRL is available in the 5L-Pak POWERPAK SO-8 single-in-line surface-mount package. Figure 1 is an external view of the package. Fig. 1 External view of the 5L-Pak packageTable 1 shows the pin assignment of IRF3315STRL. Table 1 Pin assignment of IRF3315STRL ApplicationsIRF3315STRL is suitable for, but not limited to, the following applications: - DC/DC converters - On/Off switches - Motor control - Solenoid control - Voltage tracking/regulation- High-current switchingWorking principle IRF3315STRL is constructed with an N-channel enhancement-mode FET. It is an “N-channel” device because its main conduction channel is formed by electrons (negative charge carriers). It is an “enhancement-mode” device because it requires a gate-to-source voltage (VGS) of greater than a threshold value to be turned on. When a voltage is applied to the gate terminal, the resulting electric field will cause the following action: 1) a conductive channel between the source and the drain is formed; 2) a depletion region is formed in the area between the source and the drain; 3) electrons will flow from the source to the drain. The voltage applied to the gate terminal will determine the magnitude of the electric field in the gate region, thus controlling the conductivity of the channel (commonly known as the transconductance) and the amount of current flowing through the channel. As the voltage applied to the gate terminal increases, the conductivity of the channel will decrease. Conclusion In summary, IRF3315STRL is an N-channel enhancement-mode FET, optimized for power switching applications. It has low On-State resistance, fast switching speed, low gate charge, and low capacitance switching characteristics. It is suitable for a wide range of applications, such as DC/DC converters, On/Off switches, Motor control, Solenoid control, and Voltage tracking/regulation.

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