| Allicdata Part #: | IRF3415L-ND |
| Manufacturer Part#: |
IRF3415L |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 150V 43A TO-262 |
| More Detail: | N-Channel 150V 43A (Tc) 3.8W (Ta), 200W (Tc) Throu... |
| DataSheet: | IRF3415L Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | TO-262 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 3.8W (Ta), 200W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2400pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 200nC @ 10V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 42 mOhm @ 22A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 43A (Tc) |
| Drain to Source Voltage (Vdss): | 150V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IRF3415L is a single N-Channel enhancement-mode power MOSFET that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The device is designed to have superior electro-thermal performance. It is sourced from a single-line controlled low capacitance silicon gate technology and is built with a voltaic ion-implant process. It is mainly used in DC/DC converter, secondary side synchronous rectification, ORing and other related applications.
The IRF3415L is a self-protected single N-Channel MOSFET with a low drain-source on-resistance. It features low power losses, high ruggedness and fast switching speeds. Its high performance is due to its advanced silicon technology which enables low on-resistance, high current capacity and low thermal resistance. This enables the IRF3415L to be used in a wide range of applications such as DC/DC converters, secondary side synchronous rectification, ORing and other related applications.
In terms of the device\'s working principle, the IRF3415L utilises the principle of voltage-controlled current flow. It consists of a source and a drain. When a voltage is applied across the source and drain, a channel of electrons is created between the source and the drain. The IRF3415L operates in non-linear mode, meaning that the current flowing through the channel is not proportional to the voltage. Instead, the current increases exponentially with voltage.
When the IRF3415L is used in DC/DC converters, it has two primary functions. Firstly, it acts as a switch, controlling the flow of current between the input voltage and the output voltage. Secondly, it acts as a regulator, limiting the current that flows between the input and output to maintain a constant output. The IRF3415L is also used as a synchronous rectifier in secondary side synchronous rectification, where it functions as a switch that provides control over the current flow.
The IRF3415L is also used to provide ORing in some applications. The principle for ORing is the same a DC/DC converter, but it functions differently. The IRF3415L is placed in series with two separate power sources, and when one of the sources fails, the IRF3415L will conduct current to the load from the remaining power source.
The IRF3415L has many advantages including low on-resistance, low power losses, high robustness and fast switching speed. It is a cost effective device and is used in high current applications. It is ideal for use in DC/DC converters, secondary side synchronous rectification and ORing, offering excellent performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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IRF3415L Datasheet/PDF