IRF3515STRR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRF3515STRR is part of a wide range of n-channel enhancement mode Field Effect Transistors (FET), based on the advanced Power MOSFET technology from International Rectifier. This particular part, belonging to the IRF3500 Power MOSFET family, is a single FET having an energy efficient design which allows it to be used in different types of applications.

The IRF3515STRR is designed to provide high power efficiency in a variety of products such as audio and wireless products, networking, industrial and automotive equipment, as well as other applications requiring huge current transmission. Since it is a single FET, it can be used in applications that require high voltage switching without the need to install multiple FETs. Its low parasitic capacitance and low on-resistance also ensure high power efficiency and low power losses, making it particularly suitable for low-voltage, high-current applications.

The IRF3515STRR features a single n-channel FET with a drain-source voltage of 100V and a drain current of 13A which is ideal for high current switching applications. Its low on-resistance (RDS(on)) makes it suitable for low voltage applications as it reduces power loss, allowing for higher efficiency. It also offers a gate charge (Qg) value of 71 nC, a reverse transfer capacitance of 31 pF, and a gate threshold voltage (Vgs) of 4 V.

The working principle of the single FET IRF3515STRR is based on the principle of electrostatic charge control. When a voltage is applied to the gate of the FET, the conduction channel is created which allows a current to pass through the FET. The FET acts as a switch, allowing current to flow through when the voltage on the gate is high and preventing current flow when the voltage is low. The current is regulated by the strength of the voltage applied to the gate, and hence it is capable of providing precise current switching.

Due to its highly efficient design and working principle, the single FET IRF3515STRR is highly versatile, allowing for a wide range of applications. It can be used for power switching in high voltage, high current applications such as audio and wireless products, networking, industrial and automotive equipment. It is also suitable for high-speed logic applications and in other applications requiring fast switching such as speed control, data buffering, thermal protection circuits and more.

The IRF3515STRR also offers improved noise immunity due to its low Reverse Transfer Capacitance, which eliminates noise in circuits that require high switching frequencies. Its low gate charge also reduces switching time and power loss, making it an ideal choice for high peak current and energy storage applications.

Overall, the IRF3515STRR is an efficient single FET device which can be used in a wide range of applications. It offers high power efficiency, improved noise immunity and low power losses making it ideal for high voltage, high current applications. With its low on-resistance, low gate charge and reverse transfer capacitance values, it is the perfect choice for high speed logic applications and other applications requiring precise current switching.

The specific data is subject to PDF, and the above content is for reference