Allicdata Part #: | IRF3704STRLPBFTR-ND |
Manufacturer Part#: |
IRF3704STRLPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 77A D2PAK |
More Detail: | N-Channel 20V 77A (Tc) 87W (Tc) Surface Mount D2PA... |
DataSheet: | IRF3704STRLPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 87W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1996pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 9 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 77A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRF3704STRLPBF is a non-logic P-Channel field-effect transistor (FET). It is developed and designed for a variety of power applications. Thanks to its wide range of features, the IRF3704STRLPBF is an ideal component for general-purpose power control in a variety of appliance and automotive applications. The device has an adjustable gate threshold voltage which can be set to the desired level, making it a perfect choice for power management solutions.
The IRF3704STRLPBF consists of a silicon-based MOSFET with a thickness of 0.200um and an area of 482. It is designed to handle up to 4.2A continuous current and up to 25A peak current. The transistor is also designed to handle up to 60V of gate-drain voltage. It has a maximum drain-source voltage (Vdss) of 30V. The device is housed in a lead-free and RoHS-compliant SOT-223 surface mount package.
The IRF3704STRLPBF utilizes an Enhancement-mode operation, which means that the device is able to turn on without the need for an external voltage source. When a voltage is applied to the gate terminal, electrons are attracted towards the gate oxide and create an inversion layer. This inversion layer reduces the resistance between the source and the drain and thus allows the current to flow. This transistor is well suited for high-side switching applications, as it has an integrated body diode to prevent reverse current flow.
The IRF3704STRLPBF is also well suited for a variety of automotive and industrial applications such as lighting, battery charging, motor control and solenoid control. Its superior gain and low on-resistance make it a great choice for applications that require high efficiency and precise current control. Additionally, the device can also be used for power-on and power-off blending and digital control applications.
In conclusion, the IRF3704STRLPBF is a non-logic P-Channel field-effect transistor designed for a variety of power applications. Its adjustable gate threshold voltage, wide-range of features and superior gain make it an ideal choice for a variety of automotive and industrial applications. Its integrated body diode makes it well suited for high-side switching applications. Its low on-resistance and high efficiency make it a great choice for precise current control and power-on/off blending applications.
The specific data is subject to PDF, and the above content is for reference
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