IRF3704ZPBF Allicdata Electronics
Allicdata Part #:

IRF3704ZPBF-ND

Manufacturer Part#:

IRF3704ZPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 20V 67A TO-220AB
More Detail: N-Channel 20V 67A (Tc) 57W (Tc) Through Hole TO-22...
DataSheet: IRF3704ZPBF datasheetIRF3704ZPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 57W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1220pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 21A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRF3704ZPBF is a single P-channel, Enhancement Mode Power MOSFET designed with n-channel self-alignment technology which significantly decreases the time needed to obtain good RDS(on) performance. IRF3704ZPBF is well suited for high-frequency automatic power-supply applications as well as load switches, LED drivers and level shifters.

IRF3704ZPBF equipped with IGBT technology, boosts efficiency for high frequency automatic power supply applications such as AC/DC converters. It is capable of providing high power efficiency with low gate charge and low Qg variation. With superior low on-resistance, low gate charge and excellent thermal performance, IRF3704ZPBF is designed to meet demanding requirements in the voltage range of 4V to 20V. This device\'s SO-8 narrow body SOP-8 package allows greater flexibility in terms of space saving.

The working principle of IRF3704ZPBF lies in its structure which consists of P-type source and drain regions separated by a thin N-type channel region. The current flow between source and drain is controlled by a gate terminal where application of a low voltage causes current to flow freely between source and drain. This device can be expanded as an amplifier or follower to increase or decrease the current passing through it. It is also used in switching applications, where it is used to control the passage of current from a low to high or vice versa.

IRF3704ZPBF is ideal for LED drivers, transient voltage suppressors (TVS), DC/DC converters, amplifier/follower applications, as well as static switches, voltage regulation, and other applications requiring high impedance and small footprint. In addition, its low Qg variation significantly reduces the variation in RDS(on) performance, resulting in higher efficiency and decreased system-level power losses. High-frequency operation ensures faster switching and thus higher system efficiency.

Apart from its applications in AC/DC converters, LED drivers, load switches, level shifters and amplifier/followers, IRF3704ZPBF can also be applied in system-level modularity, fine voltage regulation, and as a static FET, load switch and as a high impedance device. It is also used as a driving switch in automotive applications and as an output switch in audio and power applications. With its fast switching speeds, it is also well suited for high-frequency switching applications.

IRF3704ZPBF offers superior performance for its size and is highly reliable. It offers higher efficiency and lower system losses with its low Qg variation and RDS(on). The small 8-pin foot print of this device, along with its fast switching speed, high current capability, low on-resistance and excellent thermal performance, makes it an ideal choice for a range of applications.

The specific data is subject to PDF, and the above content is for reference

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