
Allicdata Part #: | IRF3707ZCL-ND |
Manufacturer Part#: |
IRF3707ZCL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 30V 59A TO-262 |
More Detail: | N-Channel 30V 59A (Tc) 57W (Tc) Through Hole TO-26... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.25V @ 250µA |
Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package: | TO-262 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 57W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1210pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 9.5 mOhm @ 21A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 59A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IRF3707ZCL is a high-performance, single N-Channel Enhancement MOSFET. It is a power MOSFET device that features an improved design and advanced process technology to create best-in class features such as on-resistance, avalanche performance, gate charge and threshold voltage. This makes it an ideal choice for high frequency and high efficiency applications.
Application Field
The IRF3707ZCL is designed for use in high-efficiency, high-power switching applications such as DC-DC converters, electronic motor control, and advanced power management. It is well suited for various applications such as:
- Switching Regulators
- On/Off Power Control
- High-Current Load Switching
- Power Factor Correction
- Synchronous Rectifiers
- Lighting Control
- Smart Grid
- Solar Power
- Notebook Computers
- Adapters
Working Principle
The IRF3707ZCL is a N-channel MOSFET, which means that it is a type of transistor that relies on a change in a voltage (Vgs) to control the current (Id) in a circuit. The IRF3707ZCL, as with all MOSFET devices, uses a gate-source voltage to control its current. When the gate voltage is applied, the current will flow upstream or downstream, depending on the destination voltage.
The IRF3707ZCL\'s gate threshold voltage (VGSth) is extremely low and is typically 0.8V which means that in many applications, the Gate Voltage can be adjusted by changing resistors, allowing dynamic control of the circuit current over a wide range of voltage and load conditions.
The IRF3707ZCL is capable of dissipating up to 1.5 W power and has an on-state resistance of 1.2 Ohms. This, along with its excellent avalanche energy absorption characteristics, make it ideal for high efficiency and high-power switching applications. Additionally, with its very low Rds(On) of 1.2Ω, it is able to drive loads of up to 4A. With its low input capacitance and excellent thermal diffusion, the device is extremely fast and able to switch in only 1.5 nanoseconds.
Conclusion
The IRF3707ZCL is a high-performance, single N-Channel Enhancement MOSFET. It features an improved design and advanced process technology, resulting in an excellent device that can handle very high power and current. It has a very low on-state resistance, making it suitable for high-efficiency, high-power switching applications such as DC-DC converters, electronic motor control, and advanced power management. It can also be used for switching regulators, on/off power control, high-current load switching, power factor correction, synchronous rectifiers, lighting control, smart grid, solar power, notebook computers, and adapters.
The specific data is subject to PDF, and the above content is for reference
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