IRF3707ZLPBF Allicdata Electronics
Allicdata Part #:

IRF3707ZLPBF-ND

Manufacturer Part#:

IRF3707ZLPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 59A TO-262
More Detail: N-Channel 30V 59A (Tc) 57W (Tc) Through Hole TO-26...
DataSheet: IRF3707ZLPBF datasheetIRF3707ZLPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 57W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 21A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The IRF3707ZLPBF, a type of metal-oxide semiconductor field-effect transistor (MOSFET), is an essential component in modern electronics and can be used in various digital and analog applications. It has a wide operating temperature range, on the order of -40°C to 150°C, and a low on-resistance, which implies it will consume less power while maintaining an acceptable current flow. Furthermore, the IRF3707ZLPBF supports logic level output and draws small capacitance, allowing it to be used in high-power switching systems.

A MOSFET consists of four terminals – the drain (D), the gate (G), the source (S), and the body, which is the most important terminal. When a voltage is applied between the gate and the source, an electric field is generated between the gate-source terminal and the oxide layer separating gate from the body. This electric field causes a change in the conductivity of the oxide layer, allowing current to pass through the MOSFET. Thus, it allows for electrical signals to be amplified or attenuated as desired.

When using the IRF3707ZLPBF, the drain and source terminal must be connected to a power supply, and the gate terminal must be connected to a basic logic circuit. Once the device is powered, digital signals may then be passed through the MOSFET, and the output current will correspond to the magnitude of the applied digital signals. Changes in the input voltage will cause a corresponding change in the output voltage, thereby allowing the IRF3707ZLPBF to be used in amplifiers, logic switches, and other circuits. Furthermore, since this type of MOSFET also offers protection against excessive input voltage and power, it is often used in power supplies and other power-sensitive applications.

Besides logic circuits, the IRF3707ZLPBF can also be used in switching systems. Since the gate-source and gate-drain capacitances are small, the device provides excellent switching performance with very low power consumption. Furthermore, the low on-resistance allows it to handle high frequencies without generating large amounts of heat. As a result, the IRF3707ZLPBF can be used in applications ranging from audio amplifiers for low power consumption to high power relays and motor control systems.

In conclusion, the IRF3707ZLPBF is a versatile MOSFET which can be used in a wide range of applications, from low power audio amplifiers to high power switching systems. Its unique combination of low on-resistance, small gate-source and gate-drain capacitances, and low power consumption make it an invaluable tool for both digital and analog applications. As such, the IRF3707ZLPBF has become an essential component in modern electronic circuits.

The specific data is subject to PDF, and the above content is for reference

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