IRF3708PBF

Vgs(th) (Max) @ Id:	2V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	87W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2417pF @ 15V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	24nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	12 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	2.8V, 10V
Current - Continuous Drain (Id) @ 25°C:	62A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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IRF3708PBF is a high voltage MOSFET, which belongs to the single FET category of transistors. The drain current of this MOSFET is rated up to 4A with the voltage range from 4.5 V to 100 V. This MOSFET features a low gate charge and high-performance cells design which provides for low gate-to-source thresholds, maximum gate charge ratings, and high efficiency. This type of MOSFET can be used in a variety of applications, such as in power supply systems, DC-DC converters, high power DC motors, inverters, switching power supplies, and high power LEDs.The structure of IRF3708PBF is a MOSFET which is basically a semiconductor device that works by rejecting current from a source to a drain through a gate. This MOSFET is composed of two main parts, the drain and the source. The drain is the negative terminal and the source is the positive terminal. The gate is the control terminal. This MOSFET has three pins connected to the drain, source, and gate, respectively. It is also connected to the power supply which provides the voltage needed for the MOSFET to operate. The working principle of IRF3708PBF is simple. It operates by producing a channel of current from the source to the drain. The channel will be open when the voltage applied to the gate is sufficient to turn on the device. This will allow current to flow from the source to the drain. When the voltage to the gate is removed, the channel will be closed and no current will flow. In addition to its simple operating principle, the IRF3708PBF has several unique and interesting features. One of the most interesting features is its high voltage tolerance. This MOSFET can withstand a maximum voltage of 100 V, allowing it to be used in a variety of applications. Another unique feature of this MOSFET is its low gate charge, which allows for faster switching. This MOSFET also has a high-performance cell design which provides for low gate-to-source thresholds, high efficiency and maximum gate charge ratings. The IRF3708PBF is an excellent choice for a variety of applications. It can be used in power supply systems, DC-DC converters, high power DC motors, inverters, switching power supplies, and high power LEDs. It can also be used in a variety of other applications requiring high-voltage tolerance and fast switching. With its simple working principle and unique features, the IRF3708PBF is an ideal choice for any power-related applications.

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