| Allicdata Part #: | IRF3709S-ND |
| Manufacturer Part#: |
IRF3709S |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 30V 90A D2PAK |
| More Detail: | N-Channel 30V 90A (Tc) 3.1W (Ta), 120W (Tc) Surfac... |
| DataSheet: | IRF3709S Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package: | D2PAK |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.1W (Ta), 120W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2672pF @ 16V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 41nC @ 5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 9 mOhm @ 15A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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The IRF3709S is a n-channel metal oxide semiconductor field effect transistor (MOSFET). It is part of the latest series of MOSFETs developed by International Rectifier and is designed to offer excellent switching performance and improved thermal efficiency.
The IRF3709S is designed to be used in a variety of applications, ranging from power switching and amplification, to regulating and controlling currents in electronic devices. It offers low on-resistance (Rds on) and high speed turn-on and turn-off. This makes it ideal for use in electronic systems that require a high degree of accuracy and speed, such as radio frequency (RF) power amplifiers and switching applications.
The IRF3709S is constructed from an n-type silicon die and comes packaged in a hermetically sealed module that offers excellent protection from environmental contaminants. The device has a maximum drain source voltage (Vds) rating of 400V and a continuous drain current (Id) rating of 60 amperes. It also features a maximum drain-source on-resistance (Rdson) of 6 milliohms.
The IRF3709S is a very versatile device and can be used in various types of applications. Some of the most common uses for this MOSFET include power switching and conditioning circuits, voltage controlled oscillators, current amplifiers, AC/DC converters, high-voltage power supplies, and RF power amplifiers. This MOSFET can also be used in control or logic circuits where a high-speed switching device with low on-resistance is required.
The IRF3709S operates using the principle of enhancement type MOSFETs. This means that it requires a certain minimum gate-source voltage, VGS(th) to turn it on. As the gate-source voltage is increased, the channel resistance will decrease, resulting in an increase in the drain current. When the gate-source voltage is high enough to reach the drain-source breakdown voltage, Vds(max), the MOSFET will reach saturation, and the drain current will be limited to the drain-source on-resistance.
The IRF3709S is an excellent choice for many applications due to its low cost and high efficiency. It offers low on-resistance and excellent switching performance, making it a reliable and cost effective solution for powering, controlling, and switching a variety of components. With its wide range of features and applications, the IRF3709S is well suited to many types of power and control systems.
The specific data is subject to PDF, and the above content is for reference
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IRF3709S Datasheet/PDF