IRF3709ZCSTRL Allicdata Electronics
Allicdata Part #:

IRF3709ZCSTRL-ND

Manufacturer Part#:

IRF3709ZCSTRL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 87A D2PAK
More Detail: N-Channel 30V 87A (Tc) 79W (Tc) Surface Mount D2PA...
DataSheet: IRF3709ZCSTRL datasheetIRF3709ZCSTRL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 79W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2130pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 21A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRF3709ZCSTRL is a type of field effect transistor (FET), which belongs to the single Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) family. It is a small, low-cost, low-voltage, high-current N-channel MOSFET. This type of transistor is suitable for a range of applications from high frequency switching circuits, to motor controls and chargers. The IRF3709ZCSTRL has several key characteristics which make it well suited to its application field, including a high input resistance, low on-state resistance and fast switching speed. It also features a low gate voltage and floating channel, meaning it can be used with either unipolar or bipolar power supplies.

The basic working principle of a MOSFET is essentially the same as a transistor. It is essentially a three-terminal device whose current flow is controlled by a gate voltage. When a voltage is applied to the gate terminal, it creates an electric field which modulates the conductivity of the channel and allows current to pass from the source terminal to the drain. The voltage on the gate terminal and the type of FET determine the amount of current which can pass through the channel.

When using the IRF3709ZCSTRL, the level of voltage supplied to the gate determines the level of conductivity of the channel. This means that when the voltage is increased, more current is allowed to pass through the transistor, and when the voltage is decreased, the current is limited. This makes the IRF3709ZCSTRL ideal for applications where precise control over the current is required.

The IRF3709ZCSTRL also features an enclosed case, which protects the device from environmental factors including dust and moisture. This enclosure also serves to reduce interference from other electrical components in the same proximity. This is particularly advantageous when the transistor is being used in high-frequency switching circuits, as it helps to ensure a stable current is maintained.

In conclusion, the IRF3709ZCSTRL is an ideal choice for applications requiring high current, low gate voltage and fast switching speeds. Its low on-state resistance, high input resistance and floating channel makes it well suited for high frequency switching circuits, motor control and charger circuits. Its enclosed case also helps to protect it from environmental factors and reduce interference from surrounding components. It is a great choice for a range of applications where precise control over the current is desired.

The specific data is subject to PDF, and the above content is for reference

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