Allicdata Part #: | IRF3711STRLPBFTR-ND |
Manufacturer Part#: |
IRF3711STRLPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 110A D2PAK |
More Detail: | N-Channel 20V 110A (Tc) 3.1W (Ta), 120W (Tc) Surfa... |
DataSheet: | IRF3711STRLPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3.1W (Ta), 120W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2980pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 44nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 6 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 110A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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IRF3711STRLPBF is an improved, high performance, logic level, N-channel MOSFET. This device can be used for various applications, requiring low drain-source resistance (RDSon) combined with high input impedance, high switching speed and high current-carrying capabilities. It is offered in the space-saving small SMT form and is available in different packaging alternatives such as SOT-223, D²Pak, and SOT-89.
The IRF3711STRLPBF has many advantages that make it suitable for a wide range of applications. These include its low on-state resistance (RDSon) which is ideal for high-speed switching applications, as well as its wide range of operating voltages that also make it suitable for power controllers. Other advantages include its high input impedance, low gate voltage (threshold voltage) and low gate charge, fast switching speed, and high ruggedness.
The IRF3711STRLPBF is a Logic Level MOSFET, which means that it is designed to be operated at a relatively low gate to source voltage (Vgs). This MOSFET requires a lower gate threshold voltage of 2V in order to be turned on or off, making it suitable for applications with low voltages, such as digital and analog circuit design. When the MOSFET is in the off-state, it has a very low drain current (< 1 µA), which makes it suitable for applications with very low power consumption, such as power switching, transmission, and motor control.
The working principle of an N-channel MOSFET, such as the IRF3711STRLPBF, is based on two basic modes: depletion mode and enhancement mode. In depletion mode, the flow of current between the source and drain is reduced when the gate voltage is reduced, while in enhancement mode the flow of current between the source and drain is increased when the gate voltage is increased. The IRF3711STRLPBF has an outstanding switching performance characteristics and a very low on-state resistance due to its high input impedance, which allows it to be used in high-switching frequency applications. The IRF3711STRLPBF can operate at drain voltages up to 30V and can handle up to 10A of pulsed drain current, making it suitable for many power switching applications.
The IRF3711STRLPBF can be used in many applications such as automotive, computing, industrial, and telecom systems, due to its wide range of gate voltage and current handling capabilities. Its small size and low gate voltage requirements make it ideal for use in low voltage, high switching frequency applications such as power switching, transmission, and motor control. It is also suitable for applications requiring high input impedance such as digital and analog circuit design. Due to its excellent switching performance and high ruggedness, the IRF3711STRLPBF is also suitable for high-speed signal and power regulation applications.
In summary, the IRF3711STRLPBF is an improved, high performance, logic level, N-channel MOSFET. It offers low drain-source resistance, high input impedance, wide range of operating voltages and high switching speed, making it ideal for a broad range of applications, such as power switching, transmission, motor control, digital and analog circuit design, and signal and power regulation.
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