IRF3711ZSTRR

Vgs(th) (Max) @ Id:	2.45V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	79W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2150pF @ 10V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	24nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	6 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	92A (Tc)
Drain to Source Voltage (Vdss):	20V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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IRF3711ZSTRR is an international standard used in transistor technology and is classified as a single FET, or field effect transistor, type of device. It is an enhancement mode an N-Channel MOSFET and is used in applications such as Automotive Motor Controls, LED Lighting, Power Conversion, and Line Switching. This document will discuss the application field and working principle of this device. The IRF3711ZSTRR is used in a variety of applications because of its small size, high output current, low on-resistance, and fast switching speed. The device can be used in Automotive Motor Controls applications, where high speed and fast response times are required. The device can also be used in LED Lighting applications, where its low on-resistance allows for an even distribution of current across multiple LEDs. In Power Conversion applications, the device can be used as a power switching device due to its low on-resistance and high current carrying capability. Finally, in Line Switching applications, the device can be used to switch high power lines with minimal power loss. The working principle of the IRF3711ZSTRR is based on an N-channel enhancement type MOSFET structure. This type of device comprises of an N-type substrate material, onto which a Gate, Source, and Drain pads are formed. When a voltage is applied to the Gate pad, it creates an electric field between the Gate and Source pads. This electric field increases the current flow between the Source and Drain pads, which in turn causes the MOSFET to transition from the OFF-state to the ON-state. When the MOSFET is in the ON-state, current will flow between the Source and Drain pads until the voltage applied to the Gate pad is removed. The IRF3711ZSTRR is an ideal solution for applications in automotive, LED lighting, power conversion, and line switching due to its low on-resistance, high output current, fast switching speed and low complexity. The device offers a simple solution to the challenges faced in these applications, making it the ideal choice for applications in these industries. By understanding the application field and working principle of the IRF3711ZSTRR, manufacturers can ensure they are using the right device for the right application.

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