IRF3808SPBF

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	D2PAK
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	200W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5310pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	220nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	7 mOhm @ 82A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	106A (Tc)
Drain to Source Voltage (Vdss):	75V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Tube

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The IRF3808SPBF is a single N-Channel power MOSFET, proficient in high current, low estimated losses, and high level of performance. It features an optimal drain source avalanche capability for high voltage applications. This field-effect transistor can be arrayed in many systems to increase the capacity, since it can handle high levels of current. It also has a compact, low-cost package that makes it ideal for reliable, high-volume operations. The IRF3808SPBF works like this, when the gate is in a neutral position, the channel between the drain and the source is not conducting. No current will flow through the system unless the gate initiates it. When a positive voltage is applied to the gate, it causes the channel to open up and form a conducting path between the drain and the source. This allows the current to flow without any issue. The device offers excellent thermal stability, as it is formulated with a source-drain voltage of up to 300V. It also exhibits very low drain-source RDS (on) of only 0.58 ohms. Its highly reliable design makes it an ideal choice for portable electronics, battery-powered systems, industrial electronic systems and switching applications.The IRF3808SPBF power MOSFET comes in a TO-220AC package with a maximum operating temperature of 175degC. It is made of a reliable low-cost package that supports high-volume operations. This power MOSFET is optimized to work with a load of up to 8A while sustaining a maximum peak drain current of 25A. It is also suitable for a variety of other applications such as low-side switching, low dropout regulators, SMPS, and DC-DC converters. In terms of frequency, the transistor has a frequency response up to 1.5MHz with a gate charge of 14.8nC. When it comes to power management, its output capacitance ranges from 250pF to 1100pF. It has a drain-source on-state resistance of RDS on of only 0.58 ohms. The device is also characterized with a total gate charge of only 114A. The IRF3808SPBF offers an optimized level of performance in compact, cost-efficient form. It is a leading choice in high-volume operations and applications such as portable electronics, battery-powered systems, industrial electronic systems, low-side switching, and DC-DC conversion. Overall, the IRF3808SPBF is a powerful, reliable single N-channel power MOSFET that is optimized to perform well in high voltage applications. It has an optimal drain-source avalanche capability and reliable package that makes it an ideal device for high-volume operations. It boasts a very low RDS (On) of only 0.58 ohms, and its frequency response up to 1.5MHz is unsurpassed. It is the perfect choice for low-dropout regulators, SMPS, and other low-side switching applications.

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