IRF7171MTRPBF

Vgs(th) (Max) @ Id:	3.6V @ 150µA
Package / Case:	DirectFET™ Isometric MN
Supplier Device Package:	DIRECTFET™ MN
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.8W (Ta), 104W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2160pF @ 50V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	54nC @ 10V
Series:	FASTIRFET™, HEXFET®
Rds On (Max) @ Id, Vgs:	6.5 mOhm @ 56A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	15A (Ta), 93A (Tc)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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IRF7171MTRPBF (International Rectifier Field Effect Transistor) is a P-channel enhancement-mode silicon-gate power MOSFET (metal oxide semiconductor field-effect transistor) used for portable and switching power applications. It utilizes the company\'s innovative proprietary design technologies and manufacturing process to offer exceptional performance. It is suitable for applications that require high efficiency with low input bias currents and low turn-on and turn-off times.The application field of IRF7171MTRPBF mainly includes DC/DC converters, switching regulators, motor drivers, resonant converters, and load switch applications, such as battery management, portable device circuitry, and driving series devices, to name a few.This field effect transistor can handle an average drain current of 9A and peak drain current of 18.3A with improved avalanche ruggedness and minimum input capacitance. The IRF7171MTRPBF is incredibly useful because of its low gate charge (Qg), low input capacitance (Ciss), superior avalanche characteristics, and a fast switching speed.It is able to handle voltage between -12V and -30V drain-to-source and gate-to-source volts between -4.5V and 10V. The transistor is also supplied in a SOT-223 package with a dV/dt of +500V/μs and an Avalanche energy (EAS) of 104mJ.The working principle of IRF7171MTRPBF is able to be explained with the help of a simple circuit diagram. The output, or drain, of the transistor is connected to a DC voltage source (Vd). The source, or input of the transistor, is connected to ground. The gate voltage (Vg) is applied between the gate and source. When the gate voltage is increased, the current from the drain to the source increases, providing enough power for the load connected to the drain.When the gate voltage is increased, the electric field strength between the source and drain increases, thus increasing the conductivity of the channel. This increasing conductivity results in more current flowing through the transistor, amplifying the input signal.An important aspect to understand in the working principle of IRF7171MTRPBF is the critical importance of its gate-source voltage (Vgs) range. This range is limited, with a minimum Vgs of -4.5V and a maximum Vgs of 10V. The ideal value of gate-source voltage is the threshold value of -2.7V. Increasing the voltage beyond -2.7V will result in a lower drain current at the given voltage.When the gate-source voltage is less than the threshold value, the MOSFET is said to be in the cut-off region. This means that there is very little current flowing from the source to the drain, even when the drain-to-source voltage is applied.When the gate-source voltage is greater than the threshold value, however, the MOSFET is in the saturation region and allows for maximum conductance.In addition to Vgs, the temperature of the IRF7171MTRPBF also plays a vital role in its working. Its temperature determines its threshold voltage and its input capacitance. The higher the temperature of the process, the lower the threshold voltage of the transistor and the higher the input capacitance.Finally, the drain-to-source voltage (Vds) also plays an important role in the working of the IRF7171MTRPBF. This is the voltage at which the drain current begins to flow. It is also referred to as the on/off voltage.As the Vds increases, the transistor enters a maximum drain current region and is said to be in the linear region. If the Vds exceeds a certain level, the transistor enters a breakdown region and the current increases rapidly.In conclusion, IRF7171MTRPBF is a versatile and reliable P-channel enhancement-mode power MOSFET. It has multiple applications in switching power applications, such as DC/DC converters and switching regulators. Its working is based on the increase of the electric field strength between the source and the drain when the gate voltage is increased, resulting in more current flowing through the channel, amplifying the input signal. The gate-source voltage (Vgs) range of -4.5V to 10V, the temperature of the process, and the drain-to-source voltage (Vds) also play important roles in its functioning.

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