IRF744 Allicdata Electronics
Allicdata Part #:

IRF744-ND

Manufacturer Part#:

IRF744

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 450V 8.8A TO-220AB
More Detail: N-Channel 450V 8.8A (Tc) 125W (Tc) Through Hole TO...
DataSheet: IRF744 datasheetIRF744 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 125W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 630 mOhm @ 5.3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
Drain to Source Voltage (Vdss): 450V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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IRF744 is a surface mount, N-channel, single MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). It belongs to the advancement of modern semiconductor technology, making possible to reduce the size of integrated circuits and increase their performance. It is commonly used in high-low side switching application, DC-DC converters, signal switching and protection circuitry.

The simple configuration of the device consists of three leads; Gate (G), Drain (D) and Source (S). As a “normally-off” device, IRF744 works like an open switch when the Gate-to-Source voltage is below the threshold voltage (VGS (th) ). When a positive voltage (greater than VGS (th) ) is applied between the Gate and a Source, the channel forms between the Drain and the Source. This channel passes the electric current from Drain to Source, making the device work as a closed switch.

It can be broadly divided into two categories: enhancement type and depletion type. The channels of the enhancement type MOSFETs are “off” when the voltage between Gate and Source is zero or negative. On the other hand, in depletion type MOSFETs, the source-drain channel is “on” at zero gate-source voltage. The IRF744 is an enhancement mode MOSFET, in which the channel “off” at the below-threshold voltage.

The IRF744 MOSFET operation can be easily understood by studying the basic physics behind it. A conventional MOSFET consists of two closely spaced layers of semi-conducting materials, one an N-type and the other a P-type region. If a positive voltage is applied to the Gate electrode, it attracts the holes from the P-type region to the Gate (the region between N-type and P-type layers). This depletion of holes causes the N-type region to become more positive, providing conductivity between the Drain and Source. This is the basic concept of operation of an enhancement type MOSFET like an IRF744.

The application fields of an IRF744 can be heating, motor and low power high frequency applications. It is used in low side switching application as well as driver or protective circuits. It is mostly used in SMPS (Switched Mode Power Supply) applications, gate drive circuits and load switching. IRF744 is often used in DC motor speed control, motor control and relay drive, because of its high operating temperature, low on-state and low off-state resistance, excellent thermal performance and cost-effectiveness.

The IRF744 is a popular and economical device, which can be used in different applications to control and switch power. With its small size, low power consumption and low heat generation, the IRF744 is an efficient and cost effective MOSFET. It can be used in a variety of different applications, from high-low side switching, DC-DC converter, signal switching and protective circuitry to motor control, relay drive and heating. Its high operation temperature, low on-state and low off-state resistance make it a suitable choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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