IRF7468TRPBF Allicdata Electronics

IRF7468TRPBF Discrete Semiconductor Products

Allicdata Part #:

IRF7468PBFTR-ND

Manufacturer Part#:

IRF7468TRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 40V 9.4A 8-SOIC
More Detail: N-Channel 40V 9.4A (Ta) 2.5W (Ta) Surface Mount 8-...
DataSheet: IRF7468TRPBF datasheetIRF7468TRPBF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2460pF @ 20V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 9.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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IRF7468TRPBF is a high-speed and low-voltage field effect transistor (FET) device. It is designed for use in applications where low-voltage signal switching is necessary for high frequencies and noise reduction. This device uses a PowerTrench process technology and is capable of delivering up to seven times the performance of standard digital FETs. It is ideal for low power signal switching, signal isolation, digital signal isolation and high-speed communications.

The IRF7468TRPBF uses a MOSFET technology, which is a type of transistor that can be easily switched on or off to control the flow of electricity. The device structure consists of a copper gate and substrate, an oxide insulation layer and a thin film of semiconductor material that forms the conducting channel between the source and drain terminals. The copper gate acts as a control electrode that is used to create the desired voltage, current and frequency response. The device also features a temperature coefficient of -3.8V, which allows for efficient operation over a wide range of temperatures and has a low input capacitance and fast switching speed.

The working principle of the IRF7468TRPBF is based on the bi-polar junction field effect transistor, which is formed by the interaction between the source, drain, and gate electrodes. The voltage at the gate controls the flow of current between the source and the drain, and can be used to control the on/off state of the device. When the gate voltage is applied, it forms a field in the semiconductor material that controls the conductivity of the channel between the source and the drain. By adjusting the voltage of the gate, the current flow between the source and the drain can be controlled and the on/off state of the device can be changed.

The IRF7468TRPBF is primarily used for low power, high density signal switching and signal isolation. It is well-suited for digital signal switching applications such as video, audio, and data communications. The device is also commonly used in DC/DC converters, audio amplifiers, and switching power supplies. It is also used for RF signal modulation and for digital logic gates.

In conclusion, the IRF7468TRPBF is a high-speed, low-voltage MOSFET with excellent switching performance, making it ideal for a wide range of applications. It is suitable for use in low power signal switching and signal isolation, digital signal isolation and high-speed communications, as well as DC/DC converters, audio amplifiers and switching power supplies. The device also features a low input capacitance and fast switching speed, making it an ideal choice for digital logic gates and RF signal modulation applications.

The specific data is subject to PDF, and the above content is for reference

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