| Allicdata Part #: | IRF7700TRPBFTR-ND |
| Manufacturer Part#: |
IRF7700TRPBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET P-CH 20V 8.6A 8-TSSOP |
| More Detail: | P-Channel 20V 8.6A (Tc) 1.5W (Tc) Surface Mount 8-... |
| DataSheet: | IRF7700TRPBF Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
| Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
| Supplier Device Package: | 8-TSSOP |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 1.5W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4300pF @ 15V |
| Vgs (Max): | ±12V |
| Gate Charge (Qg) (Max) @ Vgs: | 89nC @ 5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 15 mOhm @ 8.6A, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 8.6A (Tc) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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The IRF7700TRPBF is a high performance and easy to integrate Field Effect Transistor (FET) from Infineon Technologies. It is designed as a single, monolithic device with advanced process technology for high frequency applications, making it suitable for low-side switching applications in converters, inverters, end-use applications and high power waveform generators. This special FET is made up of a metal gate silicon substrate, which is extremely reliable and provides great long-term stability.
The IRF7700TRPBF can be used in a number of different applications, such as power supply and lighting control, DC/DC converters, switching regulators, remote control systems, motor and lighting applications. The device is based on Infineon\'s patented Advanced Process Technology, which provides improved resistance against adverse temperature conditions and very low gate-source capacitance and resistance. This helps to reduce static power dissipation and improve system efficiency.
The IRF7700TRPBF can operate at frequencies of up to 200KHz and supports very low switching losses and very low noise levels in operation. The advanced process technology employed also makes it a suitable choice for “hot swap” applications, where a reliable power supply unit is necessary.
In terms of its working principle, the IRF7700TRPBF accomplishes power switching by creating a channel between the drain and source terminal. When the gate voltage is applied, current flows from the drain to the source terminal and the device acts as an on-state switch. The voltage used to create the drain-source channel can be applied using either DC or AC sources. The low on-state resistance and threshold voltage ensure low switching losses, while the high COSS ratings guarantee high system efficiency.
The IRF7700TRPBF is a highly versatile and low-maintenance device that can fit into a wide range of applications. Its reliable design and advanced process technology make it suitable for critical power applications, while its low resistance and high COSS ratings ensure efficient operation. The transistor is also supported by a number of Infineon\'s design tools, making integration easy and reliable.
The specific data is subject to PDF, and the above content is for reference
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IRF7700TRPBF Datasheet/PDF