IRF7706TRPBF Allicdata Electronics
Allicdata Part #:

IRF7706TRPBFTR-ND

Manufacturer Part#:

IRF7706TRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 30V 7A 8-TSSOP
More Detail: P-Channel 30V 7A (Ta) 1.51W (Ta) Surface Mount 8-T...
DataSheet: IRF7706TRPBF datasheetIRF7706TRPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.51W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2211pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 22 mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRF7706TRPBF is a depletion mode single N-channel MOSFET which is mainly used in various applications. It is especially tailored for automotive and other applications where high power performance is paramount. IRF7706TRPBF has a number of features, such as low gate charge, low gate resistance, high current capability, high speed switching, etc., which make it well-suited for a wide range of applications.

The working principle of an IRF7706TRPBF is based on a process known as the channel-underlap, where the body region of the MOSFET is connected to the source. This creates a region of heavily doped p type material beneath the gate, which acts as an additional current carrying path. When a voltage is applied to the gate, the p type region creates an electric field, which then draws electrons away from the drain and towards the source, thus creating a pinch-off region and eliminating current flow.

In automotive applications, IRF7706TRPBF can be used as a DC-DC converter, load switches, voltage level shifters, bias circuits, H-bridges, and more. It is widely used in switched-mode power supplies, motor control systems, inverters and more. It is also ideal for battery charging and discharging, solar panel lighting control and thermostat temperature control. The low gate charge and low on-resistance of IRF7706TRPBF make it an excellent choice for use in high-current, high-efficiency automotive applications.

IRF7706TRPBF is also ideally suited for use in audio power amplifiers, linear and switching regulators, high frequency switching circuits, and other high current applications. Its low gate charge and low on-resistance make it an excellent solution for high output power systems. It is also a very effective solution for low voltage buck converter systems, where the low Q G and low R DS(on) keeps the power losses to a minimum.

IRF7706TRPBF is also well-suited for use in switching mode power supplies, as its low gate charge provides excellent switching efficiency and fast response time. It is also an excellent choice for high-frequency circuits, as its low R DS(on) minimizes power losses and helps to reduce switching time.

Overall, IRF7706TRPBF is an ideal choice for applications where high power performance is paramount. Its low gate charge and low on-resistance make it an excellent choice for a wide range of applications, including automotive, audio power amplifiers, linear and switching regulators, high frequency switching circuits, switching mode power supplies and more.

The specific data is subject to PDF, and the above content is for reference

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