IRF7707TRPBF Allicdata Electronics

IRF7707TRPBF Discrete Semiconductor Products

Allicdata Part #:

IRF7707TRPBFTR-ND

Manufacturer Part#:

IRF7707TRPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET P-CH 20V 7A 8-TSSOP
More Detail: P-Channel 20V 7A (Ta) 1.5W (Ta) Surface Mount 8-TS...
DataSheet: IRF7707TRPBF datasheetIRF7707TRPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2361pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 22 mOhm @ 7A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRF7707TRPBF is an N-Channel MOSFET that is designed to offer high switching performance and also exceptional energy efficiency. The transistor is supplied in a small surface-mount package and can be used in a variety of applications such as power switching and motor control. This article will discuss the applications and working principle of the IRF7707TRPBF.

Applications

The IRF7707TRPBF is a high-performance N-Channel MOSFET that is heavily used in power switching applications. It is ideal for high-power and high-current applications, such as motor controllers and power converters. Additionally, the device is often used in DC-DC converters and motor drives. It is capable of operating at high frequencies and can handle a large amount of energy. It is also capable of withstanding high temperatures and is extremely reliable.

The MOSFET is also widely used in many audio applications, such as power amplifiers and audio system designs. It is capable of driving diverse audio signals and can provide high-quality sound reproduction. It is also often used in radio communication systems and military equipment.[1]

Working Principle

The basic operation of a MOSFET is based on the principle of minority carriers. In a MOSFET, there are two layers of semiconductor material, with one layer acting as a gate and the other as a channel. When the gate layer is charged with a positive voltage, the minority carriers, which are electrons, move from the channel to the gate and create an electric field. This electric field restricts the flow of the majority carriers, which are holes. This restrict the flow of current from the drain to the source, thus acting as an electronic switch.

The IRF7707TRPBF is a depletion-mode MOSFET and has an extremely small gate oxide thickness. This allows for high-speed operation and the device is capable of providing fast switching speeds. Additionally, the device is capable of withstanding high temperatures, which makes it ideal for power switching applications. It also has a low gate charging current and is capable of providing an excellent thermal performance.

Conclusion

The IRF7707TRPBF is an N-Channel MOSFET that is designed to offer high switching performance and energy efficiency. It is used in many applications such as power switching, audio systems, radio communication systems and military equipment. The device operates on the principle of minority carriers and is capable of providing high switching speeds and excellent thermal performance. It is an extremely reliable and efficient device.

The specific data is subject to PDF, and the above content is for reference

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