IRF9530NL

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRF9530NL is a (N-channel Enhancement Mode) power MOSFET. It is a field-effect transistor that is primarily used in applications that require high current and/or voltage. This device has an exceptionally low on-resistance of 0.95 Ω, resulting in low thermal resistance and high peak current capability. It is widely used in various power supplies, DC-DC converters, switch mode power supplies and other high voltage and current applications.The IRF9530NL is a type of power MOSFET, which is a transistor operated with a voltage at the Gate terminal to control the amount of current flowing through the Drain and Source terminals. MOSFETs are widely used in power switches, motor control and other demanding applications due to their low on-resistance, high operating voltage, and low switching power loss.The IRF9530NL is a single enhancement-mode power MOSFET, which means that its Gate terminal must be positively biased with a control voltage in order to allow current to flow through the Drain and Source terminals. When there is no bias, current will not flow and the device is considered off. The gate-source voltage, VGS, is monitored to determine the device’s state and when the voltage exceeds a certain threshold, the device turns on and current flows. This threshold voltage is called the "Threshold Voltage" or "Turn-On Voltage".When a Gate to Source voltage is applied to the IRF9530NL, it enables three basic operating regions: cut-off, linear, and saturation regions. In the cut-off region, the Gate to Source voltage is below the Threshold Voltage, and the device is not conducting current. In the linear region, the Gate to Source voltage is above the Threshold Voltage, and a linear relationship exists between the current flowing through the device and the Gate to Source voltage. This region is usually encountered in audio and digital applications. Finally, in the saturation region, the Gate to Source voltage is high enough to fully turn on the device and current flows through it at its maximum level. This region is usually encountered in motor control and power switching applications.The IRF9530NL is designed to operate over metal-oxide-semiconductor (MOS) process steps, which ensures reliable performance and lower output capacitance with improved switching speed and noise immunity. The device is also designed to be resistant to electrostatic charges and has a large ESD (electro-static discharge) rating of ±2,000V. This makes it suitable for applications in which ESD immunity is required. Furthermore, the device features a very low on-resistance of 0.95 Ω, which is significantly lower than other MOSFETs. This low on-resistance facilitates low thermal resistance and a high peak current capability. Other features include low gate charge/reverse transfer capacitance, high avalanche/dv/dt capability, fast switching speed and low gate input capacitance.In conclusion, the IRF9530NL is an excellent choice for applications which require high current and/or voltage, such as power supplies, DC-DC converters and switch mode power supplies. It features a very low on-resistance, a large ESD rating, and a wide range of features that make it suitable for a variety of demanding applications.

The specific data is subject to PDF, and the above content is for reference