Allicdata Part #: | IRF9620S-ND |
Manufacturer Part#: |
IRF9620S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 200V 3.5A D2PAK |
More Detail: | P-Channel 200V 3.5A (Tc) 3W (Ta), 40W (Tc) Surface... |
DataSheet: | IRF9620S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 3W (Ta), 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.5A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRF9620S is a metal oxide semiconductor field-effect transistor (MOSFET) designed for high speed, low power applications in the automotive and industrial markets. The device is based on the 90V N-channel power MOSFET process and has been designed to provide a low on-resistance and high switching speed. This makes the device suitable for use in a variety of applications such as power switching, motor control, and high efficiency power supplies.
The IRF9620S is a very versatile device due to its high switching speed, low on-resistance, and availability of different packages including single, dual, triple and quad versions. It has a maximum drain-source current of 16A and maximum drain-source voltage of 90V. It also features a very low “on” resistance which reduces the power dissipation, allowing the device to be used for high-efficiency power supplies. The device can handle a wide range of load currents and voltages, making it suitable for use in a variety of applications.
The IRF9620S is a N-channel (enhancement-mode) MOSFET which means it has a build in voltage divider. When a voltage is applied between the gate and the source terminals, a channel is created between the source and drain terminals. This channel allows current to flow easily and has lower resistance than the surrounding channel due to the buildup of electrons in the gate. Depending on the voltage applied to the gate, the MOSFET can be used as a switch. When the voltage is low, the MOSFET is off or in the cut-off state, while when the voltage is high, the MOSFET is on or in the saturation state.
The IRF9620S is an ideal choice for applications where high switching speeds and low power dissipation are required. It is suitable for motor control, power switching, and high efficiency power supplies. The device features a maximum drain-source voltage of 90V and maximum drain-source current of 16A, making it ideal for applications requiring a wide range of current and voltage. It can be used in a variety of packages, including single, dual, triple, and quad versions.
The IRF9620S is a MOSFET that is designed to provide high switching speeds and low on-resistance. It features a voltage divider between the gate and source terminals which allows for high speed switching and low power dissipation. The device is suitable for applications that require low power dissipation and high switching speeds, such as motor control, power switching, and high efficiency power supplies. The device is available in a variety of packages, including single, dual, triple, and quad.
The specific data is subject to PDF, and the above content is for reference
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