| Allicdata Part #: | IRF9Z30-ND |
| Manufacturer Part#: |
IRF9Z30 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET P-CH 50V 18A TO-220AB |
| More Detail: | P-Channel 50V 18A (Tc) 74W (Tc) Through Hole TO-22... |
| DataSheet: |  IRF9Z30 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 74W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 900pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 140 mOhm @ 9.3A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
| Drain to Source Voltage (Vdss): | 50V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
Description
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The IRF9Z30 is a type of insulated-gate field effect transistor (IGFET). It is manufactured by International Rectifier (IR), and is a vertical n-channel enhancement mode power MOSFET. It is used in various applications in both electrics and electronics, such as power switches, audio amplifiers, DC-to-DC converters, motor control, and other high-power switching applications. The IRF9Z30 is often used as an inverter or power amplifier due to its attributes like high power and fast switching capabilities. It has a wide variety of applications and uses, but it is most known for its use in power switching, especially in the automotive industry. It has a maximum drain current of 12A and a drain-source voltage of 28V. It also has an on-resistance of 0.65 ohms and an off capacitance of 830pF when operated at a gate drive voltage of 10V. Its maximum power dissipation is 15W. All of these characteristics make it an ideal choice for a variety of power switching applications. The working principle of IRF9Z30 is based on the same concept as all transistors. Basically, it is composed of three layers,including source, gate and drain, which are formed using n-type and p-type semiconductor materials. The gate of the transistor is insulated from the source and the drain. By applying a particular voltage to the gate, the current between the source and the drain can be controlled. When the voltage applied to the gate is positive, it causes holes to be attracted to the channel of the transistor and thus it acts as an open switch. This switches on the transistor and current starts flowing through it. Similarly, when a negative voltage is applied to the gate, it pushes the electrons to the channel and thus it acts as a closed switch, thereby preventing current from flowing through the transistor. The IRF9Z30 can be used in various application fields. It is ideal for power supplies, motor drives, audio amplifiers, high power switch mode power supplies, high-speed motor control, and other high-power switching applications. The IRF9Z30 is a versatile and reliable power switching transistor which can be used for a number of high power applications. Its attributes such as high current capability, low on-resistance, and fast switching speed make it suitable for many applications like power supplies, motor drives, and audio amplifiers. Moreover, it has a long operational life and its attribute of regulating the current flow between source and drain make it ideal for a variety of applications. Its application fields and working principle make it a preferred choice for power switching applications in many industries.
The specific data is subject to PDF, and the above content is for reference
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