Allicdata Part #: | IRF9Z10-ND |
Manufacturer Part#: |
IRF9Z10 |
Price: | $ 1.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 60V 6.7A TO220AB |
More Detail: | P-Channel 60V 6.7A (Tc) 43W (Tc) Through Hole TO-2... |
DataSheet: | IRF9Z10 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 1.12587 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 43W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 270pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 12nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 500 mOhm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.7A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tube |
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The IRF9Z10 is a metal oxide semiconductor field-effect transistor (MOSFET). It is a type of field-effect transistor (FET) which is a semiconductor device used to amplify or switch electronic signals. The MOSFET is a type of FET specifically designed to be used as an amplifier or switch in electronic circuits. It is used in a wide range of electronic applications, including power amplifiers, switching circuits, and voltage regulators. This article will discuss the application field and working principle of the IRF9Z10.
The IRF9Z10 is a voltage controlled field-effect transistor (FET) with a single gate. It is commonly used for power switching applications, such as on/off control of DC to AC inverters and AC motor drives. The IRF9Z10 is designed to be used as a single device in a power switching circuit.
The working principle of the IRF9Z10 is based on the MOSFET transistor. The MOSFET transistor is a type of field-effect transistor with a single gate. The device is operated by applying a voltage to the gate, causing a current to flow between the source and drain terminals. This current is then used to control power in the circuit.
The IRF9Z10 offers a wide range of features that make it an attractive choice for power switching applications. It has a low on-resistance, which means it is able to switch high-power signals with very little power loss. Its switching time is also very fast, which makes it suitable for high-speed switching applications. Finally, its surface mount package allows for a compact and efficient design.
In addition to its power switch capabilities, the IRF9Z10 can also be used as an amplifier in audio and other signal applications. Its wide range of features makes it an attractive choice for audio and signal manipulation applications. It can be used to amplify or attenuate an audio signal, or it can be used to invert a signal, or to limit its frequency range.
The IRF9Z10 is also used in voltage regulation applications. The device is able to regulate the voltage applied to a circuit, by adjusting its on-resistance. This can be used to reduce or limit the current passing through the circuit, or to maintain a constant voltage. This type of voltage regulation is used in a range of applications, such as motor control, LED drivers, and low-voltage power supplies.
In addition to its power switching and voltage regulation applications, the IRF9Z10 can also be used as a level shifter in digital systems. It can be used to convert a logic signal from one voltage level to another, or it can be used to translate a signal from one logic family to another. This is useful for systems that need to interoperate with other systems using different voltage levels or logic families.
The IRF9Z10 is a versatile MOSFET transistor with a wide range of applications. It is commonly used for power switching, audio and signal manipulation, voltage regulation, and level shifting applications. Its low on-resistance and fast switching times make it an attractive option for high-power and high-speed applications. Its surface mount package also allows for a compact and efficient design.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IRF9520NLPBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 100V 6.8A TO2... |
IRF9Z30PBF | Vishay Silic... | 1.65 $ | 601 | MOSFET P-CH 50V 18A TO-22... |
IRF9540STRLPBF | Vishay Silic... | 0.99 $ | 1000 | MOSFET P-CH 100V 19A D2PA... |
IRF9Z14SPBF | Vishay Silic... | -- | 863 | MOSFET P-CH 60V 6.7A D2PA... |
IRF9Z24SPBF | Vishay Silic... | -- | 288 | MOSFET P-CH 60V 11A D2PAK... |
IRF9610SPBF | Vishay Silic... | -- | 425 | MOSFET P-CH 200V 1.8A D2P... |
IRF9383MTR1PBF | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 30V 22A DIREC... |
IRF9540NLPBF | Infineon Tec... | -- | 1000 | MOSFET P-CH 100V 23A TO26... |
IRF9Z20PBF | Vishay Silic... | 1.51 $ | 88 | MOSFET P-CH 50V 9.7A TO-2... |
IRF9510 | Vishay Silic... | -- | 1000 | MOSFET P-CH 100V 4A TO-22... |
IRF9630 | Vishay Silic... | -- | 1000 | MOSFET P-CH 200V 6.5A TO-... |
IRF9640 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 200V 11A TO-2... |
IRF9520 | Vishay Silic... | -- | 1000 | MOSFET P-CH 100V 6.8A TO-... |
IRF9610 | Vishay Silic... | -- | 1000 | MOSFET P-CH 200V 1.8A TO-... |
IRF9530 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 100V 12A TO-2... |
IRF9620 | Vishay Silic... | -- | 1000 | MOSFET P-CH 200V 3.5A TO-... |
IRF9540 | Vishay Silic... | -- | 1000 | MOSFET P-CH 100V 19A TO-2... |
IRF9Z34 | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 18A TO-22... |
IRF9Z14 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 60V 6.7A TO-2... |
IRF9410 | Infineon Tec... | -- | 1000 | MOSFET N-CH 30V 7A 8-SOIC... |
IRF9510S | Vishay Silic... | -- | 1000 | MOSFET P-CH 100V 4A D2PAK... |
IRF9520NS | Infineon Tec... | 0.0 $ | 1000 | MOSFET P-CH 100V 6.8A D2P... |
IRF9520S | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 100V 6.8A D2P... |
IRF9520STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 100V 6.8A D2P... |
IRF9530NS | Infineon Tec... | -- | 1000 | MOSFET P-CH 100V 14A D2PA... |
IRF9530S | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 100V 12A D2PA... |
IRF9530STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 100V 12A D2PA... |
IRF9540S | Vishay Silic... | -- | 1000 | MOSFET P-CH 100V 19A D2PA... |
IRF9540STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 100V 19A D2PA... |
IRF9610S | Vishay Silic... | -- | 1000 | MOSFET P-CH 200V 1.8A D2P... |
IRF9620S | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 200V 3.5A D2P... |
IRF9630S | Vishay Silic... | -- | 1000 | MOSFET P-CH 200V 6.5A D2P... |
IRF9640S | Vishay Silic... | -- | 1000 | MOSFET P-CH 200V 11A D2PA... |
IRF9640STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 200V 11A D2PA... |
IRF9Z14S | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 60V 6.7A D2PA... |
IRF9Z24 | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 11A TO-22... |
IRF9Z24NS | Infineon Tec... | -- | 1000 | MOSFET P-CH 55V 12A D2PAK... |
IRF9Z24S | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 60V 11A D2PAK... |
IRF9Z24STRR | Vishay Silic... | -- | 1000 | MOSFET P-CH 60V 11A D2PAK... |
IRF9Z30 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 50V 18A TO-22... |
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