Allicdata Part #: | IRF9Z24S-ND |
Manufacturer Part#: |
IRF9Z24S |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 60V 11A D2PAK |
More Detail: | P-Channel 60V 11A (Tc) 3.7W (Ta), 60W (Tc) Surface... |
DataSheet: | IRF9Z24S Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.7W (Ta), 60W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 570pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 280 mOhm @ 6.6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRF9Z24S is a N-Channel enhancement-mode field-effect transistor (FET), a type of transistor used to switch electrical signals. It is a single transistor device made using the MOSFET (metal–oxide–semiconductor field-effect transistor) manufacturing process, meaning it can handle a wide range of voltages, from low-level logic signals up to higher voltage power controls. It is used in a variety of applications, and this article will discuss the working principle behind its operation and some of the typical applications that make use of the IRF9Z24S device.
Working Principle of IRF9Z24S
The IRF9Z24S is a three-terminal MOSFET device, consisting of the gate, source and drain terminals. The source is connected to the body, or the substrate. When the gate is not supplied with a voltage, no current will be able to flow between the source and the drain terminals. However, when a voltage is applied to the gate, it induces an inversion, or change in charge, of the substrate at the area between the source and drain terminals, creating a conductive channel. This causes current to flow between the source and drain.
The IRF9Z24S has a low “on-state" resistance, making it useful for quickly switching higher voltages, as well as for controlling the amount of current going through a specific device. The gate voltage, or the voltage drop between the gate and the source, is used to control the “on-state" resistance and current between the source and drain. This makes the MOSFET device a useful component for switching electronic signals.
Applications of IRF9Z24S
The IRF9Z24S is used in a variety of applications, ranging from motor control to audio preamplifiers. Its low on-state resistance and fast switch times make it an ideal choice for switching higher voltage power circuits on or off quickly, or for controlling the amount of current flowing through a device. Furthermore, since the gate voltage can be used to control the resistance across the source and drain, the device can be used to control the voltage level of an amplitude-modulated signal.
In motor control, the IRF9Z24S is used to quickly turn DC motors on and off at high speeds. For instance, in a DC motor circuit with an IRF9Z24S, the current from the positive terminal of the battery is enabled and disabled by means of the MOSFET. The IRF9Z24S can also be used in radio-frequency (RF) amplifiers and preamplifiers, allowing for precise control of gain within an electronic circuit. It can also be used in power systems that require low-voltage control, such as automated sprinkler systems.
The IRF9Z24S can also be used for analog circuits and for audio preamplifiers. It can be used in audio preamplifiers to accurately control signal levels, as the gate voltage can be adjusted to control the gain. Additionally, the IRF9Z24S can be used in analog circuits to switch high frequency signals, such as those found in transmitting antennas, medical scanners and other similar devices.
Conclusion
The IRF9Z24S is a versatile N-Channel MOSFET device that can be used in a variety of applications. It has a low on-state resistance and is used to quickly switch high voltage signals on or off, or to control the amount of current flowing through a device. It can be used for motor control, for radio frequency amplifiers, for analog circuits, for audio preamplifiers, and for numerous other applications. The IRF9Z24S is an essential transistor device for engineers and designers that require a versatile, reliable and efficient power control device.
The specific data is subject to PDF, and the above content is for reference
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