Allicdata Part #: | IRF9520NS-ND |
Manufacturer Part#: |
IRF9520NS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 100V 6.8A D2PAK |
More Detail: | P-Channel 100V 6.8A (Tc) 3.8W (Ta), 48W (Tc) Surfa... |
DataSheet: | IRF9520NS Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 48W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 350pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 480 mOhm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.8A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRF9520NS is a single N-channel enhancement mode vertical MOSFET which is designed for high current, low voltage applications. It has a low gate resistance, making it ideal for high speed switching applications. It is capable of providing very low on-resistance and is suitable for both linear and switching operations. This MOSFET also features low power consumption and high peak output current ratings.
The IRF9520NS is used in a variety of applications such as power conversion, power management, motor control, lighting, pulse transformer and pulse shaping. It can also be used in battery powered systems. It is suitable for use in high power DC-DC converters, motor control, lighting control, load switch, lighting inverters, power factor correction and dc-ac inverter applications. It is used in pulse transformer and pulse shaping in communications, industrial and automotive electronics.
The principle of operation for the IRF9520NS is dependent upon the amount of voltage applied to the gate of the device. The voltage applied controls the conductivity of the device and allows current to flow from the drain to the source. When the gate voltage is low, the resistance between the drain and the source is high, otherwise known as enhancement mode. When the gate voltage is increased to a certain level the resistance between the drain and the source is lowered, known as depletion mode. When the voltage is increased above the threshold value, the device is turned on and current can be controlled by the gate voltage.
The IRF9520NS can be used in its enhancement mode operation, as lower gate voltage values will increase the resistance between the drain and the source. It may also be used in its depletion mode, where a voltage between the threshold voltage and the breakdown voltage will decrease the resistance between the drain and the source. This mode of operation is often used to maintain constant output current, or in applications with low voltage requirements.
The IRF9520NS can also be used in power management applications, where it is used to provide control and regulation of DC output. It can be used to regulate voltage and current in power supplies, to protect against short circuits, and to provide a fast response to changes in load. It can also be used in motor control applications to regulate torque and current in synchronous motors.
The IRF9520NS is also suitable for use in lighting control applications. It can be used to provide high speeds switching for dimming and color control, as well as for soft start and current limiting control. This MOSFET can also be used in pulse transformer and pulse shaping applications in the communications and automotive industries.
In conclusion, the IRF9520NS is a single N-channel enhancement mode vertical MOSFET which is designed for high current, low voltage applications. It features low gate resistance, making it suitable for high speed switching applications. It is capable of providing very low on-resistance and is suitable for both linear and switching operations. It is used in a variety of applications such as power conversion, power management, motor control, lighting, pulse transformer, and pulse shaping. The principle of operation of the device is dependent upon the amount of voltage applied to the gate, allowing current to flow from the drain to the source. The IRF9520NS is suitable for use in a wide range of applications and is a popular choice for power management applications.
The specific data is subject to PDF, and the above content is for reference
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IRF9530STRL | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 100V 12A D2PA... |
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