Allicdata Part #: | IRF9530NSTRR-ND |
Manufacturer Part#: |
IRF9530NSTRR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET P-CH 100V 14A D2PAK |
More Detail: | P-Channel 100V 14A (Tc) 3.8W (Ta), 79W (Tc) Surfac... |
DataSheet: | IRF9530NSTRR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.8W (Ta), 79W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 760pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 58nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 200 mOhm @ 8.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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An IRF9530NSTRR is a field-effect transistor (FET) used as a power switch. They contain a gate, usually a voltage input, that controls a flow of current in between the drain and source pins. With the help of their high frequency characteristics and low on-resistance values, Irf9530NSTRR transistors are widely utilized for switching power supplies, DC/DC converters, aux supply circuits, mobile phone charge systems, and in high frequency applications.
The IRF9530NSTRR is a n-channel enhancement-mode power MOSFET which is produced using the advanced MOSFET process. It has been optimized and structure features implemented to provide better switching performance with low RDS(on).
The IRF9530NSTRR is primarily used as a power switch, primarily because of its low on-resistance RDS(on). It has a low gate threshold and an enhanced body-diode reverse recovery characteristics, making it suitable for switching applications. The device is also capable of handling high-current and high-voltage, making it ideal for a broad range of switching and related applications.
The working principle of the IRF9530NSTRR is based on the MOSFET (metal–oxide–semiconductor field-effect transistor). The device contains a semiconductor channel between a pair of source and drain terminals, separated by a gate terminal. The gate terminal is used to control the channel conductivity, by providing a control voltage between the gate and drain terminals. A positive voltage applied to the gate terminal causes the channel to become increasingly more conductive and allows the current to flow from the source to the drain terminal. A negative voltage applied to the gate terminal causes the channel to become increasingly more resistant and stops the current from flowing from the source terminal to the drain.
The IRF9530NSTRR is employed in a range of applications, including DC-DC converters, PWM circuits, audio amplifiers, power MOSFET drivers, RF generators, and other related applications. It is also often used as a direct replacement of devices used in legacy applications such as power supplies and linear circuits. The device is well suited for high-frequency applications such as high power motor control systems and telecom applications.
The IRF9530NSTRR is a versatile device, ideal for applications requiring high switching frequency and tight current regulation. Its low gate capacitance, low on-resistance, and low gate threshold make it an excellent choice for switching applications. With its wide range of operating temperature and high current-carrying capabilities, it is capable of operating up to +175°C junction temperature, making it suitable for use in a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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