IRF9510STRR

The IRF9510STRR is a N-Channel Enhancement-Mode Vertical DMOS FET specifically designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. It features very low gate charge and is suitable forap plications which have relatively low gate drive requirements, such as switching regulators, solenoid/valve control, low side switching and general purpose power switching. In all these applications, the IRF9510STRR offer the lowest possible on-state resistance and lowest package parasitics for fast switching.

IRF9510STRR Application Fields

The IRF9510STRR is a N-Channel Enhancement-Mode Vertical DMOS FET with a low and fixed on-state resistance. This FET is ideal for many power management applications and power conversion circuits such as converter, photo-voltaic, automotive, lighting and industrial applications. This FET offers excellent switching performance with low on-state resistance, faster switching times and low package parasitics. Its low gate charge and body diode allows it to be used in high-speed switching applications with very low gate drive requirements. It is also suitable for low side switching applications and for use in PWM applications.

Working Principle

The IRF9510STRR is a N-Channel Enhancement-Mode Vertical DMOS FET with a low and fixed on-state resistance. It features very low drive current requirements, a wide resistance range, very low reverse leakage, and fast switching time. The device works on the principle of voltage control of a controlled rectifier. The FET has a controllable gate terminal which is used to control the conduction between the source and the drain. When a positive voltage is applied to the gate terminal, it causes the FET to turn on, thereby allowing current to flow through the channel connecting the source and drain. As the voltage at the gate terminal is increased, the FET conducts more current. Conversely, when a negative voltage is applied to the gate terminal, the FET turns off and no current flows from the source to the drain.

The IRF9510STRR FET is a versatile device for power management and switching applications. It is capable of switching loads with high efficiency and low switching losses, and is suitable for a wide range of applications. It is designed to minimize on-state resistance while providing rugged, reliable and fast switching performance.

Conclusion

The IRF9510STRR is a versatile N-Channel Enhancement-Mode Vertical DMOS FET. This device is ideal for many power management applications and power conversion circuits such as converters, photo-voltaic, automotive, lighting and industrial applications. It features very low gate charge, low and fixed on-state resistance, very low drive current requirements and fast switching time. The IRF9510STRR FET is capable of switching loads with high efficiency and low switching losses, and is suitable for a wide range of applications.