IRFR014PBF Allicdata Electronics
Allicdata Part #:

IRFR014PBF-ND

Manufacturer Part#:

IRFR014PBF

Price: $ 0.92
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET N-CH 60V 7.7A DPAK
More Detail: N-Channel 60V 7.7A (Tc) 2.5W (Ta), 25W (Tc) Surfac...
DataSheet: IRFR014PBF datasheetIRFR014PBF Datasheet/PDF
Quantity: 4901
1 +: $ 0.84420
10 +: $ 0.74592
100 +: $ 0.58968
500 +: $ 0.45729
1000 +: $ 0.36102
Stock 4901Can Ship Immediately
$ 0.92
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IRFR014PBF is a single-silicon,enhancement-mode, field-effect transistor (FET) manufactured byIntemal. It is a part of the company\'s IRF Series, which features FETs designed for high-efficiency switching applications. This particular device has an operating temperature range from -55°C to 175°C, a drain-source voltage of 14V and a drain current of 17A. Its on-state resistance is typically 2.1mΩ, and its threshold voltage is 2.2V.

The IRFR014PBF is typically used in high-power switching circuits, and its primary purpose is to act as an electronic switch that can quickly control the flow of current in a circuit. Its main feature is its low on-state resistance, which allows it to quickly switch on and off without dissipating too much power. It is also able to operate at very high frequencies due to its low capacitance, making it suitable for switching applications that require high speed. In addition to its high power efficiency, the device also features very low input capacitance and low gate-to-source capacitance, making it very useful in high-frequency, high-speed applications.

In terms of the working principle, the IRFR014PBF works on the principle of field effect. It is composed of several layers of silicon, which are separated by insulation materials. At the interface between the silicon layers, an electric field is able to be generated. This electric field is able to control the current flow in the device. By varying the amount of charge applied to the gate terminal of the device, the current flow can be increased or decreased. This property makes the device particularly useful for high-speed, high-frequency applications.

The IRFR014PBF is widely used in switched-mode power supplies, motor control, and high-frequency remote-sensing applications. It can also be used in RF communication applications, such as cellular phones and Bluetooth. Its low on-state resistance, combined with its high-speed switching capability and robust design make it an ideal choice for many applications. It is also suitable for high-temperature applications, as its operating temperature range is -55°C to 175°C.

In conclusion, the IRFR014PBF is an ideal choice for high-efficiency switching applications. Its low on-state resistance, high speed switching capability, low input capacitance, and low gate-to-source capacitance make it well suited for many applications, including switched-mode power supplies, motor control, high-frequency remote sensing, and RF communication. Its robust design and wide operating temperature range make it suitable for even the most extreme applications.

The specific data is subject to PDF, and the above content is for reference

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