Allicdata Part #: | IRFR3711ZTR-ND |
Manufacturer Part#: |
IRFR3711ZTR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 20V 93A DPAK |
More Detail: | N-Channel 20V 93A (Tc) 79W (Tc) Surface Mount D-Pa... |
DataSheet: | IRFR3711ZTR Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2.45V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 79W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2160pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 27nC @ 4.5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 5.7 mOhm @ 15A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 93A (Tc) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The IRFR3711ZTR is a high-voltage, high-speed power MOSFET transistor that operates in a wide range of frequencies. It is designed for a variety of applications in power conversion and control, as well as automotive and industrial applications. In this article, we will discuss the application field and working principle of the IRFR3711ZTR.
The IRFR3711ZTR is a single N-channel, logic-level power MOSFET. It has a breakdown voltage of 500 volts, an RDS(on) of 9 mΩ, and an integrated gate protector diodes. With its high speed switching performance and low on-state resistance, the device is ideal for applications such as AC/DC power conversion and control, DC/DC stepdown converters, and motor and solenoid control. It is also suitable for automotive and industrial applications, where noise immunity is essential.
The working principle of the IRFR3711ZTR involves applying a low-voltage input signal to the gate of the MOSFET. The signal causes electrons to flow between the source and drain of the device, thus driving current through the channel. The higher the voltage applied to the gate, the more electrons will flow, allowing higher current to flow. When the voltage is below the turn-on threshold voltage, no current will flow.
The IRFR3711ZTR is capable of handling high levels of current and carrying heavy load, making it suitable for power conversion and control applications. It also has excellent resistance to electrostatic discharge (ESD), making it suitable for automotive and industrial applications. The device is also highly efficient, with low power loss, making it ideal for applications where power efficiency is critical.
By understanding the application field and working principle of the IRFR3711ZTR, engineers can design effective power solutions for a range of applications. Its high-voltage, high-speed performance, ESD immunity, and low power loss make it a viable solution for power conversion and control, automotive and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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