Allicdata Part #: | IRFR9020TRLPBF-ND |
Manufacturer Part#: |
IRFR9020TRLPBF |
Price: | $ 0.67 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 50V 9.9A DPAK |
More Detail: | P-Channel 50V 9.9A (Tc) 42W (Tc) Surface Mount D-P... |
DataSheet: | IRFR9020TRLPBF Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.60738 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 42W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 490pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 280 mOhm @ 5.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9.9A (Tc) |
Drain to Source Voltage (Vdss): | 50V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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IRFR9020TRLPBF, a Field Effect Transistor (FET), is a single-channel N-type MOSFET (metal-oxide-semiconductor field-effect transistor). It is used for switching low-voltage, single-supply applications and offers low on-state resistance. IRFR9020TRLPBF is a depletion-mode device and its source is connected to the substrate. Therefore, when the gate voltage is lower than the source voltage, it will be turned on, conducting current.
Key Features of IRFR9020TRLPBF
- 200V drain-source breakdown Voltage
- -55C to +150C operating temperature range
- RDS(on) as low as 19 mohm
- Ultra-Low gate charge
- Pb-Free package is available
Applications of IRFR9020TRLPBF
The combination of small footprint and high performance makes IRFR9020TRLPBF an ideal choice for a variety of applications. It is mainly used in industrial and automotive applications such as:
- Lighting Controls
- Electrical/Electronic Control
- Motor Drives
- Switching Mode Power Supplies (SMPS)
- High Frequency Switching Applications
Working Principle of IRFR9020TRLPBF
IRFR9020TRLPBF is a depletion-mode device, and it is basically the same as any other MOSFET. Its construction consists of a source, drain, body, and gate electrodes. The substrate, or body, is connected to the source. The gate electrode is insulated from the body by a thin insulating layer. This layer provides a pathway between the gate and body and is used to control the flow of current between the source and drain by varying the gate voltage.
When the gate voltage is lower than the source voltage, then the MOSFET will be turned on, meaning current will flow between source and drain. On the other hand, if the gate voltage is higher than the source voltage, then the MOSFET will be turned off and no current will flow.
IRFR9020TRLPBF also has a low on-state resistance. This means that less voltage is required to switch the FET on and off, and it can also handle higher load currents while still providing low resistance. The low on-state resistance makes IRFR9020TRLPBF especially well suited for high-frequency applications like motor drives and SMPS systems.
IRFR9020TRLPBF is an efficient device that can be used in a variety of low-voltage, single-supply applications. Its low on-state resistance and small footprint make it an ideal choice for industrial and automotive applications.
The specific data is subject to PDF, and the above content is for reference
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