
Allicdata Part #: | IRFR18N15DPBF-ND |
Manufacturer Part#: |
IRFR18N15DPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 150V 18A DPAK |
More Detail: | N-Channel 150V 18A (Tc) 110W (Tc) Surface Mount D-... |
DataSheet: | ![]() |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 900pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 43nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 125 mOhm @ 11A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
Drain to Source Voltage (Vdss): | 150V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tube |
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.IRFR18N15DPBF Application Field and Working Principle
An IRFR18N15DPBF is a type of enhancement mode field effect transistor (FET). It is a class of transistor and is commonly used in the construction of integrated circuits. The IRFR18N15DPBF is technically classified as an N-Channel Enhancement Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) and is used for a variety of applications, from signal processing to power switching.
Overview
An IRFR18N15DPBF is a type of field effect transistor (FET) which is an integrated circuit technology that uses an external electric field to control the flow of current across the circuit. FETs come in two forms: Metal-Oxide-Semiconductor FETs (MOSFETs) and Junction Field-Effect Transistors (JFETs). The major difference between the two types of FETs is that MOSFETs are constructed of n-type and p-type materials and JFETs are constructed of n-type only.
Typical Use Cases
The typical use cases of an IRFR18N15DPBF include signal processing, power switching, and general purpose analog applications. The FET is a versatile device, allowing designers to create circuits with equal parts flexibility and control. It can be used to control high-power loads such as motors, solenoids, and heaters from a digital or analog signal and serves as an ideal choice for power-and-controlling switching applications.
Working Principle
An IRFR18N15DPBF works on the principle of a voltage-controlled current source. When a small voltage (typically a few volts) is applied to its gate, it will produce a current that is proportional to the magnitude of the voltage applied. This is made possible by the fact that a FET is constructed with two different types of semiconductors – a p-type and a n-type.
The n-type of semiconductor has a higher electron concentration than the p-type. This allows a negative charge to be built up between the gate and the drain, and when the gate voltage is increased, the electrons at the interface between the gate and the drain will be attracted to the gate, thus allowing current to flow through the channel. The amount of current that flows is proportional to the magnitude of the applied voltage. In other words, the IRFR18N15DPBF acts as a current source that is controlled by a voltage.
Conclusion
The IRFR18N15DPBF is a versatile device, which can be used in a variety of applications from signal processing to power switching. It works on the principle of a voltage-controlled current source and its operation is based on the difference of electron concentration between a p-type and a n-type of semiconductor. With its wide range of applications and its relatively simple operation, the IRFR18N15DPBF is a highly valuable integrated circuit technology for both hobbyists and professionals alike.
The specific data is subject to PDF, and the above content is for reference
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