IRFR3518TRPBF Discrete Semiconductor Products |
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Allicdata Part #: | IRFR3518TRPBFTR-ND |
Manufacturer Part#: |
IRFR3518TRPBF |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 80V 38A DPAK |
More Detail: | N-Channel 80V 38A (Tc) 110W (Tc) Surface Mount D-P... |
DataSheet: | IRFR3518TRPBF Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 110W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1710pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 56nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 29 mOhm @ 18A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 38A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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.IRFP3518TRPBF is a type of single N-channel HEXFET power MOSFET that is designed for switching and linear applications. This transistor is manufactured by International Rectifier Corporation, a company with a long history of providing innovative and reliable products in the semiconductor industry. The IRFP3518TRPBF is well suited for applications in various industries, such as motor control, renewable energy systems, robotics, and industrial automation.
The transistor offers outstanding performance in terms of low on-state resistance and drain-source fast switching speed. It has a drain source voltage ratings of 100V and a breakdown voltage of 350V. Its drain source on-state resistance is 17 mOhm, while its maximum drain current is 44A. This transistor features a Gate-Source protection system and fast switching characteristics, making it excellent for high-current switching applications. The device is offered in a TO-247 package.
The IRFP3518TRPBF is constructed using DMOG process technology, which provides a number of advantages in terms of improved on-state resistance performance, EMI emissions and ruggedness. The device is designed for use in switching applications that require large current levels, such as motor control, power conversion, and power supplies. It can also be used in high-current linear applications, such as audio amplifier circuits. The device is capable of handling large currents with minimal power dissipation and can respond quickly to fast load transients.
The operating principle of the IRFP3518TRPBF is simple yet effective. When a voltage is applied to the Gate of the device, it will be attracted towards the Source and induced a current flow between the Drain and Source that will turn on the device. To turn off the device, the voltage at the Gate must be brought back to zero. This simple method allows the device to operate in a wide variety of applications.
In summary, the IRFP3518TRPBF is a single N-channel HEXFET power MOSFET that can be used in a wide range of switching and linear applications. It offers outstanding performance in terms of low on-state resistance and drain-source quick switching properties. The device is designed for use in applications that require large current levels and fast switching times, such as motor control, power conversion, and power supplies. It is also suitable for linear applications such as audio amplifier circuits. The device’s operating principle is simple yet effective, and it is able to handle large currents with minimal power dissipation and quickly respond to fast load transients.
The specific data is subject to PDF, and the above content is for reference
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