IRFR5305CPBF

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	110W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1200pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	63nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	65 mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	31A (Tc)
Drain to Source Voltage (Vdss):	55V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tube

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The IRFR5305CPBF is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) designed and developed by Infineon. It is a single-gate MOSFET, which uses the source-drain voltage and the gate voltage to control current flow. It is available in both surface mount and through-hole formats.The IRFR5305CPBF is a versatile and easy to use device, suitable for a wide range of applications. It is designed to operate at very low voltage levels, with a breakdown voltage of 30V. This makes it ideal for use in low-voltage circuits and systems, such as battery powered devices. The low gate capacitance also makes it suitable for high-speed switching applications.The IRFR5305CPBF features a double sided design, with the source and drain terminals on one side and the gate on the other side. This allows for a lowtotal gate charge, which makes it suitable for high-speed switching in both analog and digital circuits. This means the device can be used in a variety of circuits and systems, including power supplies, motor drives, and communications circuits.The working principle of the IRFR5305CPBF MOSFET is based on the fact that the current flowing in a circuit can be controlled by applying a voltage to the gate. When a positive voltage is applied to the gate, electrons are attracted to the gate, which creates an electric field. This electric field attracts holes away from the source, effectively creating an electrical resistance between the source and the drain. As a result, the current flowing through the device is reduced.When a negative voltage is applied to the gate, the electric field is reversed and the holes are attracted to the gate, creating a low resistance between the source and the drain. This allows current to flow through the device.The IRFR5305CPBF MOSFET can be used in a range of applications, including power switches, motor controls, and communications circuits. Its low gate capacitance and high breakdown voltage make it ideal for use in low-voltage and high-speed circuits. Furthermore, its double-sided design enables it to be used in a variety of circuit designs.

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