IRFR9020TRR

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	42W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	490pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	14nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	280 mOhm @ 5.7A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	9.9A (Tc)
Drain to Source Voltage (Vdss):	50V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The IRFR9020TRR is a N-Channel MOSFET used in a wide variety of electronic applications. It is widely used in switching, controlling, and regulating the flow of electrical current. As the power increased from 8W to 100W, the IRFR9020TRR has been developed to meet the higher current needs demanded in today\'s technological advancements.

Application Field of IRFR9020TRR

The IRFR9020TRR is especially beneficial for applications that require high-current transfer efficiency and low power dissipation. It can be used in a variety of electronic applications, ranging from audio amplifying, switching, regulating power supplies, controlling motors, and other applications that require a high-frequency switch.In the application of audio amplifying, the IRFR9020TRR provides reliable switching features with its low on-resistance, low input capacitance, low gate-drain capacitance, and fast switching capabilities. Additionally, the addition of a gate resistor in the circuit to reduce impedance allows the circuit to run at a lower voltage and decrease power dissipation, improving power efficiency and audio clarity.The IRFR9020TRR is also ideal for applications such as motor control and power supply regulation. Its low on-resistance and gate charge enable it to switch quickly and efficiently, allowing for more precise and reliable control of power. Its low power dissipation is also beneficial for controlling power supplies, as the device can prevent power overuse.

Working Principle of IRFR9020TRR

The IRFR9020TRR is a N-Channel MOSFET, which stands for Metal-Oxide-Semiconductor Field Effect Transistor. It is constructed from two sections: the gate and the drain-source channels. The gate acts as a switch for controlling the flow of current. By applying an electrical voltage and current to the gate, the current flow through the drain-source channels can be controlled.The drain-source channels are composed of a N-Type semiconductor material, which is why they are referred to as N-Channel MOSFETs. The N-Type material allows electrons to acquire the necessary energy to become free electrons and flow through the circuit. The gate charges and de-charges the N-Type material, allowing electrons to pass from the drain to the source, which causes current to flow and powers the circuit.

Conclusion

The IRFR9020TRR is a powerful and efficient N-Channel MOSFET that can be used in a variety of applications. It is especially beneficial in applications that require high-current transfer efficiency and low power dissipation. Its low on-resistance and gate charge enable it to switch quickly and efficiently, allowing for more precise and reliable control of power. Additionally, its low input capacitance and low gate-drain capacitance provide reliable switching features and improve audio design. The IRFR9020TRR is the perfect choice for a variety of consumer, industrial, and automotive applications.

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