IRFR2407TRL

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	110W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2400pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	110nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	26 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	42A (Tc)
Drain to Source Voltage (Vdss):	75V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction
The IRFR2407TRL is a single N-MOSFET with a drain current rating of 5A and Source Power Dissipation of up to 9.7W. It was designed for small signal switching applications and is primarily used in low-voltage, low-power environments. It is also suitable for low-noise signal applications and for general purpose applications.

Applications
The IRFR2407TRL is suitable for a variety of applications including small signal switching circuits, power switches, motor control, level control, and high frequency switching. This device is also commonly used in power on reset circuits, bootstrap circuits, and charge pumps. It is used in a wide range of consumer appliances, ranging from PCs and cell phones to home entertainment systems. It is also suitable for applications in the automotive and industrial sectors.

Advantages
The IRFR2407TRL has several advantages over other MOSFETs. These include low on-state resistance, high threshold voltage and fast switching operations. Additionally, it has relatively low gate charge and gate leakage current, making it well suited for switching applications. Furthermore, its high source power dissipation and low source-drain capacitance make it ideal for low noise signal applications.

Working Principle
The IRFR2407TRL is an N-MOSFET; it uses a single-gate structure and operates by allowing an externally applied voltage to control an electric current that passes from the source to the drain. This process is called the inversion layer and takes place when the gate voltage is higher than the threshold voltage. The electric current is then amplified by the MOSFET\'s gain, which is proportional to the width of the inversion layer. When the voltage on the gate is lowered, the gain is reduced and the current shut off.

Conclusion
The IRFR2407TRL is a single N-MOSFET with various advantages, including low on-state resistance, high threshold voltage and fast switching operations. It is suitable for a variety of applications, including small signal switching circuits, power switches, motor control, level control, and high frequency switching, as well as charge pumps and bootstrap circuits. Its operating principle is based on an externally applied voltage controlling an electric current passing from the source to the drain.

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