IRFR9014TRR

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Power MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) are the most widespread type of power transistor due to their low cost, high efficiency and high reliability. The IRF9014TRR is a power MOSFET fabricated by International Rectifier (IR), which is a pioneer in integrating MOSFET technology in application specific ICs and discrete power transistors. This power MOSFET is a good fit for many versatile and demanding applications due to its low RDS(on), high current capacity, wide input voltage range and rugged design.

The IRF9014TRR belongs to a depletion-mode MOSFET family, where it features low RDS(on) and wide input voltage range, however, its maximum drain current is limited due to the small die size. It also includes integrated ESD protection circuitry and higher system reliability against latchup, shorts and ESD. Unlike traditional MOSFET, IRF9014TRR uses advanced silicon nitride and self-aligned PolySilicon gate techniques, which result in lower RDS(on) and reduced gate charge (Qg).

The IRF9014TRR is an advanced MOSFET which can be used in various power supply applications, including DC-DC converters, switch-mode power supplies (SMPS), battery chargers and other motor controls that require low-RDS(on) and high switching speed. As such, this transistor is designed for a wide range of applications including white goods, industrial motors and pumps, automotive, telecom power and more.

The IRF9014TRR is an interpretation of the traditional MOSFET. It offers power density up to 850W/in2, drain current up to 43A, and a maximum drain-source voltage of 30V. Additionally, its power stage design demonstrates an excellent current capability (Id) to drive low losses with higher frequency faster switching. The device also offers a logic threshold voltage range of -2.2V/+2.2V.

Due to its unique design and highly advanced technical features, the IRF9014TRR enables a much higher PWM frequency and wide range of applications. It works on the principle of a standard MOSFET which allows the control of the channel current with a voltage difference between the gate and the source. Typically the control voltage can be supplied directly by a microcontroller, a logic-level power supply, or standalone ICs. When a control voltage is applied to the gate, the MOSFET is activated and current flows from source to drain. When the voltage is removed, the MOSFET will be turned off, stopping the current flow.

In sum, the IRF9014TRR is an advanced power MOSFET with low RDS(on), high current capacity, wide input voltage range and rugged construction. Compared to traditional MOSFETs, it offers higher power density, better transient response, and lower switching losses due to its use of advanced silicon nitride and self-aligned PolySilicon gate techniques. Its exceptional features make it ideal for DC-DC converters, SMPS, battery chargers, motor control and a host of other power-related applications.

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