IRFR120NCTRLPBF Allicdata Electronics
Allicdata Part #:

IRFR120NCTRLPBF-ND

Manufacturer Part#:

IRFR120NCTRLPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 100V 9.4A DPAK
More Detail: N-Channel 100V 9.4A (Ta) 48W (Tc) Surface Mount D-...
DataSheet: IRFR120NCTRLPBF datasheetIRFR120NCTRLPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 48W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 210 mOhm @ 5.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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IRFR120NCTRLPBF transistor is one a type of insulated-gate field-effect transistor (IGFET) also referred to as MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) used for application in power supply control, power line communications, and related fields. It is an N-Channel Field Effect Transistor (NFET) which shows excellent switching performance when used with a proper circuit design and facilitates smoother operation. By leveraging on-state resistance controlling features and offers an operating frequency up to 10 MHz.

Application Field & Working Principle of IRFR120NCTRLPBF

IRFR120NCTRLPBF is commonly used in high-power applications, including switching regulators, DCDC converters, MOSFET inverters and rf power amplifiers. The transistors can also be used in current control, buffer, amp and switch driver, as well as logic gate driver circuits in audio/video applications, power supply control, power line communications and related electronic systems.

Incorporating an insulated gate, IRFR120NCTRLPBF transistors work by controlling the flow of electrons between the drain and the source terminals. By applying a voltage to the gate in power supplier control application, the electrons are attracted to the insulated gate, allowing the current to flow from the source to the drain. On the other hand, by reducing the gate voltage, the flow of current from the drain to the source is reduced, reverting the process.

This is how IRFR120NCTRLPBF transistors switches the current flow and it’s fundamental principle of operation.

Advantages of IRFR120NCTRLPBF

The IRFR120NCTRLPBF is an N-channel transistor that offers numerous advantages in terms of fast switching, superior performance and optimized power dissipation. It is a highly efficient means to control the current, voltage and related operations in power supply control applications.

It is also a smaller package due to the fact that it doesn’t need isolated metal layers or package the elements separately.

Disadvantages of IRFR120NCTRLPBF

The only drawbacks from using IRFR120NCTRLPBF transistors are the cost associated with their purchase, which is notably higher than traditional transistors, and the fact that they are more prone to secondary breakdowns.

Conclusion

Insulated-gate field-effect transistors, also known as MOSFETs, are an excellent solution in power supply control application, either in logic driver, current control, buffer or switching tasks. The IRFR120NCTRLPBF transistors provide superior performance and fast switching in addition to a smaller package size.

However, the downsides of using IRFR120NCTRLPBF transistors are their high cost and the greater possibility of experiencing a secondary breakdown. In any case, they remain an excellent choice in power supply control electronic systems.

The specific data is subject to PDF, and the above content is for reference

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