IRFR3418PBF

Vgs(th) (Max) @ Id:	5.5V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.8W (Ta), 140W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	3510pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	94nC @ 10V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	14 mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	70A (Tc)
Drain to Source Voltage (Vdss):	80V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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The IRFR3418PBF is a field-effect transistor (FET) designed for applications like hot-swap controllers in board level-power distribution systems, load switches, Crowbar circuits, and linear regulators. The FET works by using an electrical charge to control current or voltage across a circuit. This device is built with an N-Channel enhancement mode MOSFET which is a type of FET that is activated when the gate voltage reaches a certain voltage threshold.The main advantage of the IRFR3418PBF relative to traditional BJTs (bipolar junction transistors) is that since it is an enhancement-mode MOSFET it does not require any gate current in order to activate (“turn-on”). This can be beneficial in some types of applications since it decreases power loss and makes the overall circuit more efficient. In terms of ratings, the IRFR3418PBF has a maximum drain-to-source voltage of 100V and a maximum drain current of 17A. It can handle drain-source voltages up to 100V, which is useful in applications that require higher voltage support. The maximum continuous drain-source on-state resistance, or Ron, is 4.3 ohms (at 25°C). The typical gate threshold voltage, or VGSth, is 2.85V. The IRFR3418PBF has lower on-state resistance (Ron) than similar devices from other manufacturers, making it an attractive choice for applications that require high switching speeds. It also has a fast switching speed due to its low switching times: the typical switch-on time is 12ns and the typical switch-off time is 16ns. The IRFR3418PBF also has a low package profile, making it well suited for professional applications such as telecom connections, industrial automation, and general purpose logic switching applications. It is designed to work in temperatures ranging from -55°C to +150°C and its total gate charge, Qg, is 8nC. In terms of its working principle, the IRFR3418PBF is an enhancement-mode FET, which means that it is non-conducting until a voltage is applied to its gate terminal. The structure of this device consists of a source, drain, and gate electrode. When the negative voltage on the gate is high enough to create an inversion layer, current is allowed to flow from the source to the drain. This is the basic principle upon which MOSFETs operate. The IRFR3418PBF is an excellent choice for a variety of applications such as hot-swap controllers for board level power distribution systems, load switches, Crowbar circuits, and linear regulators. Its low Ron and fast switching speeds makes it stand out from similar devices from other manufacturers for high-speed switching applications. Its low package profile and wide temperature range makes it well suited for many different types of applications.

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