IRFR3707

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	87W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1990pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	19nC @ 4.5V
Series:	HEXFET®
Rds On (Max) @ Id, Vgs:	13 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	61A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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IRF3701 is a high-side P-channel enhancement mode power MOSFET, which is widely utilized in huge loads switching applications such as power switching, relays, and solenoid drivers. It offers fast switching time with low on-resistance and low gate-drive power. This MOSFET comes in a D2PAK 7L dual device that can handle both 7A and 2mA for a total of 9A. The package design offers adequate thermal dissipation and isolation from adjacent components.

Introduction to IRF3707

The IRF3707 is an enhancement type power MOSFET designed and developed by International Rectifier (IR) that offers P-Channel/N-Channel junction field-effect transistor (JFET) switch modes with very low RDS(on) and high breakdown voltage. Low Qg and low gate drive requirements make it well suited for high-side switching applications such as solid-state switches, motor control and many other power switching applications.

Application Field of IRF3707

The IRF3707 is mainly used for a wide range of applications in the area of switching power applications. It is selected when a current needs to be switched off or on in a circuit, which is often the case during control of high power load applications. Common applications include DC-DC converters, low voltage power supplies, motor drivers, relays, and other high power switching applications.

Working Principle of IRF3707

The IRF3707 is based on P-Channel MOSFETs, which provides low gate-drive power with fast switching times. The MOSFET is constructed using a source, gate and drain terminals, just like a typical Bjt. When power is applied to the gate the channel of the transistor is open, allowing the current to flow from the source to the drain. When power is removed from the gate, the channel is completely shut off, and zero current is allowed to flow.This makes the IRF3707 ideal for use in power switching applications that require low on-resistance and fast switching times. The gate-drive power is minimized with the gate being tied to ground. When power is applied to the gate, the voltage from the gate to the source goes from 0 V to the gate threshold voltage Vth, which is equal to the breakdown voltage V(BR). This allows the current to flow from the source to the drain.

Conclusion

The IRF3707 is an excellent choice for high-side switching applications due to its very low RDS(on) and high breakdown voltage. It offers Low Qg and low gate drive requirements and fast switching times. It is used in a wide range of applications such as DC-DC converters, low voltage power supplies, motor drivers, relays, and other high power switching applications. The MOSFET is constructed using a source, gate and drain terminals, and the gate-drive power is minimized by tying the gate to ground. With all these advantages, it is easy to see why the IRF3707 is one of the most popular power MOSFETs in the market.

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