IRFR420TR

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	D-Pak
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2.5W (Ta), 42W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	360pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	19nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	3 Ohm @ 1.4A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	2.4A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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The IRF420TR is a high-power semiconductor device designed for use in pro audio equipment and other applications requiring precision high-power output in a compact form. The device is a unipolar MOSFET, meaning it is a single semiconductor device that uses two insulated-gate electrodes to help control the flow of current between the source and drain electrodes. The source electrode is typically connected to a fixed voltage, typically ground, while the drain electrode is connected to the desired output voltage. The insulated-gate electrode is used to regulate the current flow between the source and the drain electrodes.The IRF420TR is generally used in Class A and Class AB amplifier circuits in pro audio equipment. It is also used in loudspeaker distortion circuits to reduce crossover distortion. In pro audio equipment, the device is often used in power amplifiers, where it helps to produce high fidelity sound at high volume levels without distortion.To understand the working principle of the IRF420TR, it is important to understand what a MOSFET is and how it works. A MOSFET is an acronym for Metal Oxide Semiconductor Field Effect Transistor. It is an electronic device which consists of an insulated gate, a source, a drain and a substrate. The gate is separated from the source and the drain by an insulating layer of an oxide material. The insulated gate electrode will allow current to flow only when it is positively charged. When the gate is left unconcerned, the MOSFET appears to be in an "off" state and no current flows between the source and the drain.When a voltage is applied to the source, the gate voltage is increased. This increase in gate voltage creates an electric field which will force electrons to move between the source and the drain. As a result, current is created between the source and the drain which is proportional to the voltage applied. This is known as the channel-building process or "on" state. When the voltage is removed, the electrons return back to their original positions and the MOSFET returns to its off state.The IRF420TR is designed for maximum power efficiency, low power dissipation and high reliability. Its high output current capability, low on-resistance, and low-to-moderate switching speeds allow it to be used in power applications where extremely high output power is needed. Its on-resistance is significantly lower than the on-resistance of other MOSFETS in the same power range, meaning the IRF420TR can deliver more power with less heat. The device\'s high-power applications include switching converters, power amplifiers, power supplies, and other high-power, high-current applications.In summary, the IRF420TR is a high-power unipolar MOSFET designed to provide powerful and highly-efficient output in a compact form. Its low on-resistance, high current capability, and moderate switching speeds make it suitable for a wide range of power applications, including switching converters, power amplifiers, power supplies and other high-power, high-current applications.

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