
Allicdata Part #: | IRFR812TRPBFTR-ND |
Manufacturer Part#: |
IRFR812TRPBF |
Price: | $ 0.30 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 500V 3.6A DPAK |
More Detail: | N-Channel 500V 3.6A (Tc) 78W (Tc) Surface Mount D-... |
DataSheet: | ![]() |
Quantity: | 1000 |
2000 +: | $ 0.27893 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 78W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 810pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 2.2 Ohm @ 2.2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.6A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The IRFR812TRPBF is a high-performance, high-current, low-NOx MOSFET device that enables its users to significantly reduce the operating power and create designs with superior level of control. The device is a single N-channel MOSFET with an integrated high-speed, low-power P-channel MOSFET.
Application Field
The IRFR812TRPBF is mainly used in home appliances and automotive applications. When used in appliances, the high-efficiency low-NOx MOSFET can help reduce power consumption and noise. It is well-suited for motor speed control, AC/DC and DC/DC converters, and other motor control applications that require superior level of control. In automotive applications, this MOSFET can be used in fuel injectors, ventilation systems and audio systems. Thanks to its low on-state resistance, it is becoming popular among car audio system designers who want to achieve superior sound quality.
Working Principle
The IRFR812TRPBF is powered by an N-channel MOSFET. This device is known for its low on-state resistances, making it capable of low power dissipation, high efficiency, and superior level of control. Most importantly, the device has a low-NOx (nitrous oxide) rating, which helps to reduce the emission of pollutants in the atmosphere. This makes the device more environment friendly and helps reduce power consumption. The device works by connecting the gate terminal to the source and then applying a voltage to the gate. Once the gate-source voltage reaches the threshold voltage, the channel opens and allows current to flow between the drain and the source terminals.
The P-channel MOSFET integrated with the device comes into play when using the device in automotive and home appliance applications. This MOSFET helps to protect the N-channel MOSFET and ensures a stable power delivery. The P-channel MOSFET also helps to reduce unwanted noise and prevents the device from overloading.
The IRFR812TRPBF is a great choice for engineers and designers who want to achieve high-efficiency and superior level of control in their system designs. Thanks to its low on-state resistances, the device can reduce power dissipation, increase efficiency, and improve noise performance. By pairing it with a P-channel MOSFET, the device can also be used to control motors, AC/DC and DC/DC converters, and a variety of other applications.
The specific data is subject to PDF, and the above content is for reference
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