Allicdata Part #: | IRFR9010-ND |
Manufacturer Part#: |
IRFR9010 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 50V 5.3A DPAK |
More Detail: | P-Channel 50V 5.3A (Tc) 25W (Tc) Surface Mount D-P... |
DataSheet: | IRFR9010 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 240pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 9.1nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 500 mOhm @ 2.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.3A (Tc) |
Drain to Source Voltage (Vdss): | 50V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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In the world of semiconductors, metal-oxide-semiconductor field-effect transistors, more commonly known as MOSFETs, are used as switches, voltage amplifiers, and voltage regulators. Of these, the IRFR9010 is one of the most commonly used MOSFETs. In this article, we will discuss the applications of the IRFR9010 MOSFET and the principles of its operation.
IRFR9010 Applications
The IRFR9010 is a popular single power MOSFET, with a drain-source voltage rating of 100 V and a maximum current rating of 40 A. This makes it ideal for applications that require high power handling, such as adjustable speed drives, power converters, over-voltage protection circuits, high-frequency inverters and DC-DC conversion circuits. The device also has internal protection against excess voltage, making it extremely reliable and suitable for use in many types of applications.
In addition to its power handling capabilities, the IRFR9010 also has extremely low impedance levels, making it suitable for use in high current applications. The device also features an extremely low on-resistance, which means that it can be used to achieve high efficiency in power supply circuits. Moreover, the device has a temperature range of -55 °C to 150 °C, making it suitable for use in extreme environments.
IRFR9010 Working Principles
The IRFR9010 MOSFET works according to the same principles as other MOSFETs. At its core, it is a three-terminal device consisting of a source, drain and gate. The source is the input terminal, which is connected to the power source, while the drain is the output terminal, which is connected to the load. The gate is the control terminal, which is used to control the current flow between the source and drain.
When a voltage is applied to the gate, an electric field is created, which attracts charge carriers from the source to the drain and in turn, increases the conductivity of the device. This allows current to flow more freely and hence more power is delivered to the load. The amount of current that flows through the device is determined by the gate-source voltage, and a higher voltage means more current.
In addition to controlling the current flow, the gate voltage is also used to control the on-resistance of the device. When the gate voltage is increased, the on-resistance decreases, which increases the efficiency and power handling capabilities of the device.
The IRFR9010 MOSFET is a relatively simple device, which makes it easy to use and versatile. It is commonly used in power switching applications, where high-power handling and low on-resistance is required. Moreover, the device’s extreme temperature range and internal protection against over-voltage make it suitable for use in a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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