Allicdata Part #: | IRFR9214-ND |
Manufacturer Part#: |
IRFR9214 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 250V 2.7A DPAK |
More Detail: | P-Channel 250V 2.7A (Tc) 50W (Tc) Surface Mount D-... |
DataSheet: | IRFR9214 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | D-Pak |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 220pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 3 Ohm @ 1.7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.7A (Tc) |
Drain to Source Voltage (Vdss): | 250V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IRFR9214 is a type of MOSFET, or Metal Oxide Field Effect Transistor (MOSFET). It is a single-gate device, meaning it has only one gate input and is used for switching, regulating, or amplifying signals. The MOSFET was first developed during the 1970s and is now one of the most important types of transistors used in the electronics industry. The IRFR9214 has been designed for enhanced performance and is considered one of the highest-performing MOSFETs available.
The IRFR9214 has a wide range of applications in electronics and is used in a variety of circuit configurations. It is most commonly used in switching and regulating circuits because of its high efficiency. It can be used to control the flow of electricity in an alternating circuit, and is often used as a voltage regulator. It can also be used as an amplifier, allowing for efficient voltage regulation and amplification of electrical signals. The device is also widely used in other applications such as motor drives and low noise amplifiers.
The IRFR9214 has a specific design that makes it ideal for a variety of circuits and applications. The transistor’s two-layer gate structure provides enhanced gate control and improved performance. This feature also improves the device’s immunity to noise and its switching capabilities. It also has a low on-resistance and low-voltage operation, making it an ideal choice for use in low-voltage circuits. The device has a low drain to source capacitance which helps reduce switching loss and improve overall system performance.
The working principle of an IRFR9214 is based on the transistor’s gate control. A gate is an electrically controlled switch that is used to control electrical current. When the voltage applied across the gate is higher than the threshold voltage, the device is turned on and current is allowed to flow from source to drain. As the voltage decreases, the device is turned off and current is blocked from flowing. This process can be repeated many times, allowing the device to be used as a switch or amplifier.
The IRFR9214 is a versatile and reliable MOSFET. It has a wide range of applications and is used in a variety of circuits and systems. Its low on-resistance and low-voltage operation make it an ideal choice for use in low-voltage circuits. Its two-layer gate structure provides enhanced gate control and improved performance, making it an excellent choice for use in switching and regulating circuits. Its low drain to source capacitance helps reduce switching loss and improves system performance.
The specific data is subject to PDF, and the above content is for reference
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