IRG7CH23K10EF Allicdata Electronics
Allicdata Part #:

IRG7CH23K10EF-ND

Manufacturer Part#:

IRG7CH23K10EF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IGBT 1200V DIE
More Detail: IGBT
DataSheet: IRG7CH23K10EF datasheetIRG7CH23K10EF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: *
Part Status: Obsolete
Description

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The IRG7CH23K10EF is a high-performance, isolated module insulated gate bi-polar transistor (IGBT). This component has various properties. Its voltage range usually varies between 600 volts and 1200 Volts, with a standard current of 23 Amps. It offers a collector current of 10A and a collector-emitter voltage of 1200V. It also has a maximum junction temperature rating of 150 degrees Celsius. Therefore, it is both safe and reliable.

The IRG7CH23K10EF is used in a wide range of applications, from power conversion to general industrial uses. It has become a popular choice for applications where a high-performance and reliable component is needed. It is commonly used in applications such as electric drives, power supplies, uninterruptable power supplies, and motor control systems. In addition, it is also used in consumer electronics and industrial automation.

The IRG7CH23K10EF is constructed with a ceramic insulated base which makes it capable of withstanding voltages up to 1200V. This component also includes a built-in protection diode and two mutually isolated source terminals. This helps to ensure that the component is safe and reliable. The IRG7CH23K10EF is an ideal choice for applications that require high frequency operation.

The working principle of the IRG7CH23K10EF is quite simple. It consists of an insulated gate bi-polar transistor (IGBT). This component is able to control current and has two mutually isolated source terminals. The input voltage is applied to the gate, which in turn switches the transistor on and off, thus controlling the current flow. The more the transistor switches on and off, the higher the frequency of operation.

The IRG7CH23K10EF is a high-performance component that is widely used in various applications. It is capable of withstanding voltages up to 1200V and has a maximum junction temperature rating of 150 degrees Celsius, making it safe and reliable. Its two mutually isolated source terminals help to ensure that the component is protected from any external voltages. Its high frequency of operation makes it ideal for applications such as electric drives, power supplies, uninterruptable power supplies, and motor control systems.

The specific data is subject to PDF, and the above content is for reference

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