| Allicdata Part #: | IRG7T100HF12B-ND |
| Manufacturer Part#: |
IRG7T100HF12B |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOD IGBT 1200V 100A POWIR 62 |
| More Detail: | IGBT Module Half Bridge 1200V 200A 680W Chassis M... |
| DataSheet: | IRG7T100HF12B Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Part Status: | Obsolete |
| IGBT Type: | -- |
| Configuration: | Half Bridge |
| Voltage - Collector Emitter Breakdown (Max): | 1200V |
| Current - Collector (Ic) (Max): | 200A |
| Power - Max: | 680W |
| Vce(on) (Max) @ Vge, Ic: | 2.2V @ 15V, 100A |
| Current - Collector Cutoff (Max): | 2mA |
| Input Capacitance (Cies) @ Vce: | 13nF @ 25V |
| Input: | Standard |
| NTC Thermistor: | No |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | POWIR® 62 Module |
| Supplier Device Package: | POWIR® 62 |
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IRG7T100HF12B is an Insulated Gate Bipolar Transistor (IGBT) module. It belongs to the class of power transistors, which are transistors that are capable of controlling high power devices such as motors and heating elements. IRG7T100HF12B has a maximum voltage rating of 1200 V and a current rating of 100 A, which makes it suitable for many applications.
IGBTs are used to switch high current and to control power devices because of their ability to turn on and off quickly, handle high voltages, and provide relatively low losses. IRG7T100HF12B is one of the most popular IGBTs in the market. It has a fast turn-on time, low losses, and has excellent turn-on avalanche performance. This makes it well-suited for applications that require high current, high voltage, and fast switching.
IRG7T100HF12B is typically used in applications such as motor control, uninterruptible power supplies, high-voltage inverters, and other power conversion systems. It is also used for power semiconductor drives and robotics applications. It is also used for induction heating, welding and lamination applications.
The working principle of the IRG7T100HF12B is based on the structure of an IGBT. It is composed of two main components: a control electrode and an emitter. The control electrode, or the gate, is an insulated gate connected to the emitter, which is a terminal directly connected to the collector. When a positive voltage is applied to the gate, it causes a current to flow between the emitter and the collector. This creates a current path, which is then regulated by the IGBT\'s switching characteristics.
The operating voltage of the IRG7T100HF12B is typically 5 V, and the maximum current rating is 100 A. The collector-emitter voltage rating is 1200 V. The maximum voltage rating is 1200 V, and the maximum power rating is 140 W. The typical switching speed is between 20-100 kHz, making it suitable for high-frequency applications.
In conclusion, IRG7T100HF12B is an IGBT module that is suitable for applications such as motor control, uninterruptible power supplies, high-voltage inverters, and other power conversion systems. It has a fast turn-on time, low losses, and excellent turn-on avalanche performance. The working principle of the IRG7T100HF12B is based on the structure of an IGBT and the operating voltage, collector-emitter voltage, and maximum power ratings are 1200 V, 5 V, and 140 W, respectively. This makes it suitable for high-frequency applications.
The specific data is subject to PDF, and the above content is for reference
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IRG7T100HF12B Datasheet/PDF